Stable Resistive Switching in VO2 Films Synthesized on Mazy-Like h-BCN Nanowalls/Si(1 0 0) Substrates | Sciact - CRIS-система Института катализа

Stable Resistive Switching in VO2 Films Synthesized on Mazy-Like h-BCN Nanowalls/Si(1 0 0) Substrates Научная публикация

Журнал

Materials Science and Engineering B: Solid-State Materials for Advanced Technology (Materials Science and Engineering B-Advanced Functional Solid-State Materials)
ISSN: 0921-5107

Вых. Данные

Год: 2025, Том: 321, Номер статьи : 118511, Страниц : 9 DOI: 10.1016/j.mseb.2025.118511

Ключевые слова

Vanadium dioxide; Phase-change materials; Boron carbonitride; Vertical nanowalls; Chemical vapor deposition; Resistive switching

Авторы

Kapoguzov K.E. ^1,2 , Mutilin S.V. ¹ , Belaya S.V. ³ , Kichay V.N. ³ , Yakovkina L.V. ³ , Korolkov I.V. ³ , Saraev A.A. ⁴ , Kosinova M.L. ³

Организации

1	Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 13 Lavrentiev aven., 630090, Russia
2	Novosibirsk State University, Novosibirsk, 1 Pirogov str., 630090, Russia
3	Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, 3 Lavrentiev aven., 3, 630090, Russia
4	Boreskov Institute of Catalysis SB RAS, Novosibirsk, 5 Lavrentiev aven., 630090, Russia

Информация о финансировании (1)

Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)

Two-terminal resistive switches based on vanadium dioxide are considered as promising functional devices in oxide electronics. However, resistive switches based on polycrystalline films cannot withstand long-term switching cycles. In this work, we propose a novel heterostructures of vanadium dioxide thin films synthesized on vertically oriented mazy-like boron carbonitride nanowalls. A resistance jump of more than three orders of magnitude during the temperature phase transition in vanadium dioxide was obtained for all formed structures. We demonstrated that vanadium dioxide films grown on vertical nanowalls exhibit a more than two orders of magnitude higher number of stable resistive switches, compared to films synthesized on well-studied silicon substrates. The number of stable switching increases from 4 × 107 to 2 × 109 with the increasing height of boron carbon nitride nanowalls from 50 to 400 nm. The studies suggest that the proposed heterostructures are promising for the development of stable and long-life functional electronic and optoelectronic devices.

Kapoguzov K.E. , Mutilin S.V. , Belaya S.V. , Kichay V.N. , Yakovkina L.V. , Korolkov I.V. , Saraev A.A. , Kosinova M.L.
Stable Resistive Switching in VO2 Films Synthesized on Mazy-Like h-BCN Nanowalls/Si(1 0 0) Substrates
Materials Science and Engineering B: Solid-State Materials for Advanced Technology (Materials Science and Engineering B-Advanced Functional Solid-State Materials). 2025. V.321. 118511 :1-9. DOI: 10.1016/j.mseb.2025.118511 WOS Scopus OpenAlex

Поступила в редакцию:	3 апр. 2025 г.
Принята к публикации:	10 июн. 2025 г.
Опубликована online:	18 июн. 2025 г.
Опубликована в печати:	1 нояб. 2025 г.

Web of science:	WOS:001514238200001
Scopus:	2-s2.0-105008213687
OpenAlex:	W4411360528

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