Chemically Prepared Tellurium Layer on PbSnTe Films: Passivation and Oxidation Properties | Sciact - CRIS-система Института катализа

Chemically Prepared Tellurium Layer on PbSnTe Films: Passivation and Oxidation Properties Научная публикация

Журнал

Surfaces and Interfaces
ISSN: 2468-0230

Вых. Данные

Год: 2025, Том: 71, Номер статьи : 106887, Страниц : 8 DOI: 10.1016/j.surfin.2025.106887

Ключевые слова

Chalcogenides, Tellurium cap layer, Oxidation, ARPES, XPS, Ellipsometry

Авторы

Akhundov Igor O. ¹ , Ishchenko Denis V. ¹ , Fedosenko Evgeniy V. ¹ , Golyashov Vladimir A. ^1,2 , Shvets Vasily A. ¹ , Suprun Sergey P. ¹ , Kyrova Ekaterina D. ^1,4 , Mikaeva Anastasiya S. ^1,3 , Tereshchenko Oleg E. ^1,2,3

Организации

1	Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
2	Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Koltsovo 630559, Russia
3	Novosibirsk State University, 630090, Novosibirsk, Russia
4	Novosibirsk State Technical University, 630073, Novosibirsk, Russia

Информация о финансировании (2)

1	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	FWUR-2024-0042
2	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)

Preparation of atomically clean surfaces of lead and tin chalcogenides is an important task for the development of lasers, photodetectors, thermoelectric elements, as well as a prerequisite for the study of electronic properties of the surface, including the properties of topological insulators. We proposed an alternative way to passivate the PbSnTe surface by creating a 3 nm thick tellurium layer by wet chemical treatment and investigated the oxidation process of the Te-capped PbSnTe film by X-ray photoelectron spectroscopy and ellipsometry. Twostage oxidation with the initial formation of tin oxide and a subsequent formation of lead and tellurium oxides confirmed the mechanism of oxygen diffusion through the tellurium layer with the diffusion coefficient equal to 2⋅10–17 cm2s-1. The protection time of the 3 nm thick tellurium layer was >5 min, allowing samples to be loaded without the use of an inert gas glove box. In addition, further vacuum annealing yields an atomically clean and structurally ordered (111) PbSnTe surface, which makes it possible to study the surface electronic structure by ARPES.

Akhundov I.O. , Ishchenko D.V. , Fedosenko E.V. , Golyashov V.A. , Shvets V.A. , Suprun S.P. , Kyrova E.D. , Mikaeva A.S. , Tereshchenko O.E.
Chemically Prepared Tellurium Layer on PbSnTe Films: Passivation and Oxidation Properties
Surfaces and Interfaces. 2025. V.71. 106887 :1-8. DOI: 10.1016/j.surfin.2025.106887 СКИФ ID

Поступила в редакцию:	8 февр. 2025 г.
Принята к публикации:	4 июн. 2025 г.
Опубликована online:	9 июн. 2025 г.
Опубликована в печати:	15 авг. 2025 г.

СКИФ ID:

3947

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