Trisylilamine Derivative for Plasma-Assisted Fabrication of SiCN:H Copper Diffusion Barrier with Reduced Value of Permittivity
Full article
| Journal |
Thin Solid Films
ISSN: 0040-6090
|
| Output data |
Year: 2026,
Article number
: 140871,
Pages count
:
DOI:
10.1016/j.tsf.2026.140871
|
| Tags |
Thin film, Diffusion barrier, Silicon carbonitrideCopperOptical Emission spectroscopy |
| Authors |
Ermakova Evgeniya
1
,
Shayapov Vladimir
1
,
Saraev Andrey
2
,
Maximovsky Eugene
1
,
Kirienko Viktor
3
,
Sulyaeva Veronica
1
,
Gerasimov Evgeny
2
,
Kosinova Marina
1
|
| Affiliations |
| 1 |
Department of functional materials, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, 630090, Russia
|
| 2 |
Department of Catalyst Study, Boreskov Institute of Catalysis SB RAS, Novosibirsk, 630090, Russia
|
| 3 |
Laboratory of Nonequilibrium Semiconductor Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia
|
|
Funding (2)
|
1
|
Russian Science Foundation
|
23-79-00026 (123041400012-0)
|
|
2
|
Ministry of Science and Higher Education of the Russian Federation
|
|
Tris(trimethylsilyl)amine was employed as a single-source precursor for plasma-enhanced chemical vapor deposition of dielectric silicon carbonitride films, which act as copper diffusion barriers, at low-to-moderate temperatures. The influence of key process parameters—including precursor partial pressure, plasma power, and deposition temperature—on the deposition rate, chemical bonding structure, composition, and film properties was investigated using Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, energy-dispersive X-ray analysis, and spectroscopic ellipsometry. Plasma chemistry was studied by in-situ optical emission spectroscopy. The refractive index of the films ranged from 1.53 to 1.76, while their permittivity (k-value) varied from 2.7 to 4.5. Post-deposition thermal annealing reduced the permittivity to a value as low as 2.5. The Cu diffusion barrier properties were characterized by analyzing the interfaces of a Si/SiOC:H/SiCN:H/Cu stack annealed at 400°C using transmission electron microscopy