Forming Interface in Pd/Fe/GaAs/InGaAs Structure for Optical Detector of Free-Electron Spin | Sciact - CRIS-system of Boreskov Institute of Catalysis

Forming Interface in Pd/Fe/GaAs/InGaAs Structure for Optical Detector of Free-Electron Spin Full article

Journal

Technical Physics Letters
ISSN: 1063-7850 , E-ISSN: 1090-6533

Output data

Year: 2012, Volume: 38, Number: 1, Pages: 12-16 Pages count : 5 DOI: 10.1134/S1063785012010154

Tags

GaAs; Technical Physic Letter; Substrate Side; Atomic Force Micro; Magneto Optical Kerr Effect

Authors

Tereshhenko O.E. ^1,2 , Paulish A.G. ¹ , Neklyudova M.A. ¹ , Shamirzaev T.S. ¹ , Yaroshevich A.S. ¹ , Prosvirin I.P. ^2,5 , Zhaksylykova I. ¹ , Dmitriev D.V. ¹ , Toropov A.I. ¹ , Varnakov S.N. ³ , Rautskii M.V. ¹ , Volkov N.V. ^3,4 , Ovchinnikov S.G. ³ , Latyshev A.V. ^1,5

Affiliations

1	Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
2	Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 644053 Russia
3	Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia
4	Reshetnev Siberian State Aerospace University, Krasnoyarsk, 660014 Russia
5	Novosibirsk State University, Novosibirsk, 630090 Russia

Funding (3)

1	Russian Foundation for Basic Research	10-02-91067
2	Siberian Branch of the Russian Academy of Sciences
3	Президиум РАН

Conditions necessary for the formation of a Fe/GaAs interface have been established and the electrical, magnetic, and optical properties of Pd/Fe/GaAs heterostructures with InGaAs quantum wells have been studied. The possibility of obtaining an epitaxial layer of Fe on GaAs(001) surface at room temperature is demonstrated. The magnetization curve of Fe layer exhibits hysteresis with an easy axis in plane of the sample. Iron exhibits surface segregation by diffusion through a 4-nm-thick Pd layer. The properties of obtained Pd/Fe/GaAs/InGaAs structures show evidence for their possible use in optical detectors of free-electron spin.

Tereshhenko O.E. , Paulish A.G. , Neklyudova M.A. , Shamirzaev T.S. , Yaroshevich A.S. , Prosvirin I.P. , Zhaksylykova I. , Dmitriev D.V. , Toropov A.I. , Varnakov S.N. , Rautskii M.V. , Volkov N.V. , Ovchinnikov S.G. , Latyshev A.V.
Forming Interface in Pd/Fe/GaAs/InGaAs Structure for Optical Detector of Free-Electron Spin
Technical Physics Letters. 2012. V.38. N1. P.12-16. DOI: 10.1134/S1063785012010154 WOS Scopus РИНЦ ANCAN OpenAlex

Терещенко О.Е. , Паулиш А.Г. , Неклюдова М.А. , Шамирзаев Т.С. , Ярошевич А.С. , Просвирин И.П. , Жаксылыкова И.Э. , Дмитриев Д.В. , Торопов А.И. , Варнаков С.Н. , Рауцкий М.В. , Волков Н.В. , Овчинников С.Г. , Латышев А.В.
Формирование границы раздела структуры Pd/Fe/GaAs/InGaAs для оптической регистрации спина свободных электронов.
Письма в Журнал технической физики. 2012. Т.38. №1. С.27-36. РИНЦ

Submitted:	Jul 26, 2011
Published print:	Jan 1, 2012
Published online:	Feb 17, 2012

Web of science:	WOS:000300454100005
Scopus:	2-s2.0-84857330224
Elibrary:	17977121
Chemical Abstracts:	2012:239389
Chemical Abstracts (print):	157:341958
OpenAlex:	W2024214631

DB	Citing
Web of science	2
Scopus	2
Elibrary	3
OpenAlex	2