Charge Transport Mechanism of High-Resistive State in RRAM Based on SiOx Научная публикация
Журнал |
Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118 |
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Вых. Данные | Год: 2019, Том: 114, Номер: 3, Номер статьи : 033503, Страниц : 5 DOI: 10.1063/1.5074116 | ||||||||||
Ключевые слова | Carrier transport Electron transport properties Flash memory Ionization RRAM Silicon oxides Solvents | ||||||||||
Авторы |
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Организации |
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Информация о финансировании (2)
1 | Российский научный фонд | 18-49-08001 (АААА-А18-118030590007-2) |
2 | Ministry of Science and Technology | 107-2923-E-009-001-MY3 |
Реферат:
Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature.
Библиографическая ссылка:
Gismatulin A.A.
, Kruchinin V.N.
, Gritsenko V.A.
, Prosvirin I.P.
, Yen T.-J.
, Chin A.
Charge Transport Mechanism of High-Resistive State in RRAM Based on SiOx
Applied Physics Letters. 2019. V.114. N3. 033503 :1-5. DOI: 10.1063/1.5074116 WOS Scopus РИНЦ
Charge Transport Mechanism of High-Resistive State in RRAM Based on SiOx
Applied Physics Letters. 2019. V.114. N3. 033503 :1-5. DOI: 10.1063/1.5074116 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 22 окт. 2018 г. |
Принята к публикации: | 10 янв. 2019 г. |
Опубликована в печати: | 21 янв. 2019 г. |
Опубликована online: | 25 янв. 2019 г. |
Идентификаторы БД:
Web of science | WOS:000456825400022 |
Scopus | 2-s2.0-85060598787 |
РИНЦ | 38651209 |
Chemical Abstracts | 2019:196777 |
OpenAlex | W2914378282 |