Numerical Study of One-Fold Coordinated Oxygen Atom in Silicon Gate Oxide Научная публикация
Конференция |
9th IEEE Hong Kong Electron Devices Meeting 22-22 июн. 2002 , Hong Kong |
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Сборник | Proceedings - IEEE Hong Kong Electron Devices Meeting, 9th, Hong Kong, China, June 22, 2002 Сборник, Institute of Electrical and Electronics Engineers. New York, N. Y.2002. ISBN 0780374290. |
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Вых. Данные | Год: 2002, Том: 2002-January, Номер статьи : 1029152, Страниц : 4 DOI: 10.1109/HKEDM.2002.1029152 | ||||||||||
Ключевые слова | Charge carrier processes; Dielectric devices; Dielectric substrates; Electron traps; Hydrogen; Luminescence; Oxidation; Oxygen; Physics; Silicon | ||||||||||
Авторы |
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Организации |
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Информация о финансировании (1)
1 | International Association for the Promotion of Co-operation with Scientists from the New Independent States of the Former Soviet Union | 97-0347 |
Реферат:
The capturing properties of nonbridging oxygen hole centers with unpaired electrons ≡SiO· and hydrogen defects ≡SiOH in silicon oxide have been studied using the ab initio density-functional method. It was found that the ≡SiO· defect is an electron trap and should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. On the other hand, the ≡SiOH defect, which was proposed to be an electron or "water trap" in the oxide (A. Hartstein and D. R. Young, Appl. Phys. Lett., vol. 38, pp. 631, 1981), could not be an electron trap according to the present calculation results.
Библиографическая ссылка:
Gritsenko V.A.
, Shaposhnikov A.
, Novikov Y.N.
, Baraban A.P.
, Wong H.
, Zhidomirov G.M.
, Roger M.
Numerical Study of One-Fold Coordinated Oxygen Atom in Silicon Gate Oxide
В сборнике Proceedings - IEEE Hong Kong Electron Devices Meeting, 9th, Hong Kong, China, June 22, 2002. – Institute of Electrical and Electronics Engineers., 2002. – C.39-42. – ISBN 0780374290. DOI: 10.1109/HKEDM.2002.1029152 WOS Scopus РИНЦ
Numerical Study of One-Fold Coordinated Oxygen Atom in Silicon Gate Oxide
В сборнике Proceedings - IEEE Hong Kong Electron Devices Meeting, 9th, Hong Kong, China, June 22, 2002. – Institute of Electrical and Electronics Engineers., 2002. – C.39-42. – ISBN 0780374290. DOI: 10.1109/HKEDM.2002.1029152 WOS Scopus РИНЦ
Идентификаторы БД:
Web of science | WOS:000178399000009 |
Scopus | 2-s2.0-84948780884 |
РИНЦ | 26769716 |
Chemical Abstracts | 2003:194248 |
Chemical Abstracts (print) | 139:330825 |
OpenAlex | W2163956629 |