Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor Научная публикация
Журнал |
Nanotechnology
ISSN: 0957-4484 , E-ISSN: 1361-6528 |
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Вых. Данные | Год: 2020, Том: 31, Номер: 50, Номер статьи : 505704, Страниц : 10 DOI: 10.1088/1361-6528/abb505 | ||||||||||
Ключевые слова | memristor; SiOx; charge transport mechanism; electronic structure | ||||||||||
Авторы |
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Организации |
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Информация о финансировании (3)
1 | Российский научный фонд | 18-49-08001 (АААА-А18-118030590007-2) |
2 | Ministry of Science and Technology | 107-2923-E-009-001-MY3 |
3 | Российский научный фонд | 19-19-00286 (АААА-А19-119120490056-8) |
Реферат:
THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.
Библиографическая ссылка:
Gismatulin A.A.
, Voronkovskii V.A.
, Kamaev G.N.
, Novikov Y.N.
, Kruchinin V.N.
, Krivyakin G.K.
, Gritsenko V.A.
, Prosvirin I.P.
, Chin A.
Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor
Nanotechnology. 2020. V.31. N50. 505704 :1-10. DOI: 10.1088/1361-6528/abb505 WOS Scopus РИНЦ
Electronic Structure and Charge Transport Mechanism in a Forming-Free SiOx-Based Memristor
Nanotechnology. 2020. V.31. N50. 505704 :1-10. DOI: 10.1088/1361-6528/abb505 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 12 мая 2020 г. |
Принята к публикации: | 3 сент. 2020 г. |
Опубликована online: | 2 окт. 2020 г. |
Опубликована в печати: | 11 дек. 2020 г. |
Идентификаторы БД:
Web of science | WOS:000575335400001 |
Scopus | 2-s2.0-85092801616 |
РИНЦ | 45214154 |
Chemical Abstracts | 2020:2265767 |
PMID (PubMed) | 33021224 |
OpenAlex | W3089384072 |