Electronic Structure of ZrO2 and HfO2 Научная публикация
Конференция |
Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices : NATO Advanced Research Workshop 11-14 июл. 2005 , St. Petersburg |
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Сборник | Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices Сборник, Springer. Dordrecht.2006. 492 c. ISBN 978-1-4020-4367-3. |
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Журнал |
NATO Science Series II: Mathematics Physics and Chemistry
ISSN: 1568-2609 |
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Вых. Данные | Год: 2006, Том: 220, Страницы: 423-434 Страниц : 12 DOI: 10.1007/1-4020-4367-8_34 | ||||
Ключевые слова | high-k dielectrics; band structure; effective mass; defects; oxygen vacancy | ||||
Авторы |
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Организации |
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Реферат:
Band structures, density of states and effective masses of electrons and holes of cubic, tetragonal and monoclinic phases of ZrO2 and HfO2 have been calculated. Oxygen vacancy has been modeled by removing off one oxygen atom from 12-atom monoclinic cell. Incorporation of oxygen vacancy leads to formation of new filled sub-band formed mostly by d-electrons of the metals. Enormously high leakage current, observed in ZrO2 and HfO2 is explained by multi-phonon trap ionization model.
Библиографическая ссылка:
Perevalov T.V.
, Shaposhnikov A.V.
, Nasyrov K.A.
, Gritsenko D.V.
, Gritsenko V.A.
, Tapilin V.M.
Electronic Structure of ZrO2 and HfO2
В сборнике Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices. – Springer., 2006. – C.423-434. – ISBN 978-1-4020-4367-3. DOI: 10.1007/1-4020-4367-8_34 WOS РИНЦ
Electronic Structure of ZrO2 and HfO2
В сборнике Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices. – Springer., 2006. – C.423-434. – ISBN 978-1-4020-4367-3. DOI: 10.1007/1-4020-4367-8_34 WOS РИНЦ
Идентификаторы БД:
Web of science | WOS:000236350700034 |
РИНЦ | 46653633 |
OpenAlex | W2283303603 |