Potential Profiles Near the Schottky Nanocontacts Научная публикация
Журнал |
Physica E: Low-Dimensional Systems and Nanostructures
ISSN: 1386-9477 , E-ISSN: 1873-1759 |
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Вых. Данные | Год: 2011, Том: 43, Номер: 8, Страницы: 1486-1489 Страниц : 4 DOI: 10.1016/j.physe.2011.04.013 | ||||
Ключевые слова | Nanospheres; Nanowires | ||||
Авторы |
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Организации |
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Информация о финансировании (1)
1 | Energimyndigheten | NANO-SEE 181-1 |
Реферат:
The conventional Schottky model describes in the mean-field approximation the electrostatic potential appearing in a doped semiconductor during its flat contact with a metal. More recently, the Schottky model has been used to describe the mean-field potential profile near a metallic nanosphere surrounded by or located on the surface of a semiconductor. We present the corresponding results for a metallic nanowire. In these three cases, the shape of the potential profiles and their scalings are very different. In particular, the full width at half maximum of the potential barrier dramatically shrinks if the geometry changes from linear to cylindrical and then to spherical. In addition, we scrutinize the effect of the discreteness of the dopant charges on the potential near a metallic nanosphere
Библиографическая ссылка:
Zhdanov V.P.
, Kasemo B.
Potential Profiles Near the Schottky Nanocontacts
Physica E: Low-Dimensional Systems and Nanostructures. 2011. V.43. N8. P.1486-1489. DOI: 10.1016/j.physe.2011.04.013 WOS Scopus РИНЦ
Potential Profiles Near the Schottky Nanocontacts
Physica E: Low-Dimensional Systems and Nanostructures. 2011. V.43. N8. P.1486-1489. DOI: 10.1016/j.physe.2011.04.013 WOS Scopus РИНЦ
Даты:
Поступила в редакцию: | 19 февр. 2011 г. |
Принята к публикации: | 19 апр. 2011 г. |
Опубликована online: | 28 апр. 2011 г. |
Опубликована в печати: | 1 июн. 2011 г. |
Идентификаторы БД:
Web of science | WOS:000292122100015 |
Scopus | 2-s2.0-79957627213 |
РИНЦ | 17001838 |
Chemical Abstracts | 2011:676537 |
Chemical Abstracts (print) | 156:325169 |
OpenAlex | W2061480019 |