Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition Full article
Journal |
Journal of Experimental and Theoretical Physics Letters (JETP Letters)
ISSN: 0021-3640 , E-ISSN: 1090-6487 |
||||||||
---|---|---|---|---|---|---|---|---|---|
Output data | Year: 2019, Volume: 109, Number: 2, Pages: 116-120 Pages count : 5 DOI: 10.1134/S0021364019020115 | ||||||||
Tags | ELECTRONIC-STRUCTURE; OXYGEN VACANCIES; THIN-FILMS; OXIDE | ||||||||
Authors |
|
||||||||
Affiliations |
|
Funding (1)
1 | Russian Science Foundation | 14-19-00192 |
Abstract:
Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 (1) . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO2 and La2O3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.
Cite:
Perevalov T.V.
, Gritsenko V.A.
, Gutakovskii A.K.
, Prosvirin I.P.
Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2019. V.109. N2. P.116-120. DOI: 10.1134/S0021364019020115 WOS Scopus РИНЦ
Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2019. V.109. N2. P.116-120. DOI: 10.1134/S0021364019020115 WOS Scopus РИНЦ
Original:
Перевалов Т.В.
, Гриценко В.А.
, Гутаковский А.К.
, Просвирин И.П.
Строение сегнетоэлектрических пленок Hf0.9La0.1O2, полученных методом атомно-слоевого осаждения
Письма в Журнал экспериментальной и теоретической физики. 2019. Т.109. №2. С.112-117. DOI: 10.1134/s0370274x19020097 РИНЦ
Строение сегнетоэлектрических пленок Hf0.9La0.1O2, полученных методом атомно-слоевого осаждения
Письма в Журнал экспериментальной и теоретической физики. 2019. Т.109. №2. С.112-117. DOI: 10.1134/s0370274x19020097 РИНЦ
Dates:
Submitted: | Nov 21, 2018 |
Accepted: | Nov 23, 2018 |
Published print: | Jan 1, 2019 |
Published online: | Apr 22, 2019 |
Identifiers:
Web of science | WOS:000467096800009 |
Scopus | 2-s2.0-85064804024 |
Elibrary | 38676720 |
Chemical Abstracts | 2019:860542 |
OpenAlex | W2942205968 |