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Study of AlN Coatings for Microstrip Gas Chambers Научная публикация

Конференция 7th Pisa Meeting on Advanced Detectors
25-31 мая 1997 , La Biodola, Isola d’Elba
Журнал Nuclear Instruments and Methods in Physics Research Section A
ISSN: 0168-9002
Вых. Данные Год: 1998, Том: 409, Номер: 1-3, Страницы: 33-36 Страниц : 4 DOI: 10.1016/S0168-9002(97)01229-1
Ключевые слова Activation energy; Electric conductivity of solids; Electron emission; Film preparation; Microstrip devices; Semiconducting aluminum compounds; Semiconducting films; Substrates; Thermal effects; X ray photoelectron spectroscopy
Авторы Buzulutskov A. 1 , Bondar A. 1 , Mironenko L. 1 , Nagaslaev V. 1 , Shekhtman L. 1 , Tatarinov A. 1 , Kascheev S. 2 , Belyanin A. 3 , Blaut-Blachev A. 3 , Bouilov L. 3 , Spitsyn B. 3
Организации
1 Budker Institute of Nuclear Physics, 630090 Novosibirsk, Russia
2 Institute of Catalysis, 630090 Novosibirsk, Russia
3 Institute of Physical Chemistry, 117915 Moscow, Russia

Реферат: A new semiconducting coating material for microstrip gas chambers (MSGCs) has been studied: AlN. The conductivity of AlN films at room temperature varies from 10(-10) to 10(-12) Ohm(-1) cm(-1) depending on the preparation conditions; it increases with temperature with an activation energy of 0.8-0.9 eV. The electron-induced secondary electron emission yield from AlN has been measured: it is about 5 at the maximum. The influence of the substrate nature and that of the film's preparation conditions on the composition of AlN films are investigated using X-ray photoelectron spectroscopy.
Библиографическая ссылка: Buzulutskov A. , Bondar A. , Mironenko L. , Nagaslaev V. , Shekhtman L. , Tatarinov A. , Kascheev S. , Belyanin A. , Blaut-Blachev A. , Bouilov L. , Spitsyn B.
Study of AlN Coatings for Microstrip Gas Chambers
Nuclear Instruments and Methods in Physics Research Section A. 1998. V.409. N1-3. P.33-36. DOI: 10.1016/S0168-9002(97)01229-1 WOS Scopus РИНЦ CAPlusCA OpenAlex
Даты:
Опубликована в печати: 21 мая 1998 г.
Опубликована online: 4 февр. 1999 г.
Идентификаторы БД:
Web of science: WOS:000074975100010
Scopus: 2-s2.0-0032066398
РИНЦ: 13299962
Chemical Abstracts: 1998:494586
Chemical Abstracts (print): 129:208341
OpenAlex: W2022787030
Цитирование в БД:
БД Цитирований
Web of science 3
Scopus 3
РИНЦ 3
OpenAlex 2
Альметрики: