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Diffraction Method for Structure Investigations of Semiconductor Heterosystems Using Synchrotron Variable Wavelength Научная публикация

Конференция XII National Synchrotron Radiation Conference
13-18 июл. 1998 , Новосибирск
Журнал Nuclear Instruments and Methods in Physics Research Section A
ISSN: 0168-9002
Вых. Данные Год: 2000, Том: 448, Номер: 1-2, Страницы: 282-285 Страниц : 4 DOI: 10.1016/S0168-9002(00)00227-8
Ключевые слова Crystal lattices; Diffraction; Epitaxial growth; Molecular beam epitaxy; Numerical methods; Semiconducting aluminum compounds; Semiconductor device structures; Semiconductor superlattices; Synchrotron radiation; X ray diffraction analysis
Авторы Trukhanov E.M. 1 , Revenko M.A. 1 , Amirzhanov R.M. 1 , Fedorov A.A. 1 , Kolesnikov A.V. 1 , Nikitenko S.G. 2 , Vasilenko A.P. 1
Организации
1 Institute of Semiconductors Physics, Academy of Sciences of Russia, Prosp-Lavrentyeva 13, Siberian Branch, 630090 Novosibirsk-90, Russia
2 Institute of Catalysis, Academy of Sciences of Russia, Siberian Branch, 630090 Novosibirsk-90, Russia

Информация о финансировании (4)

1 Российский фонд фундаментальных исследований 00-02-17485
2 Российский фонд фундаментальных исследований 00-02-17994
3 Министерство образования и науки Российской Федерации 97-2025
4 Министерство образования и науки Российской Федерации 99-3015

Реферат: The synchrotron investigation method is presented for structure research of semiconductor heterosystems with homogeneous layers and superlattices using the variable wavelength of a synchrotron radiation beam passing at the immobile sample. The used experimental procedure is potentially suitable for in situ X-ray diffractometry during the growth of epitaxial layers. For the proposed procedure, the equations are derived for the first time to measure tetragonal crystal lattice distortions and superlattice period distribution. The experimental results have been obtained for heterosystems with layers of AlxGa1−xAs grown by molecular-beam epitaxy (MBE) onto GaAs substrates.
Библиографическая ссылка: Trukhanov E.M. , Revenko M.A. , Amirzhanov R.M. , Fedorov A.A. , Kolesnikov A.V. , Nikitenko S.G. , Vasilenko A.P.
Diffraction Method for Structure Investigations of Semiconductor Heterosystems Using Synchrotron Variable Wavelength
Nuclear Instruments and Methods in Physics Research Section A. 2000. V.448. N1-2. P.282-285. DOI: 10.1016/S0168-9002(00)00227-8 WOS Scopus РИНЦ CAPlusCA OpenAlex
Даты:
Опубликована в печати: 21 июн. 2000 г.
Опубликована online: 22 июн. 2000 г.
Идентификаторы БД:
Web of science: WOS:000088282500057
Scopus: 2-s2.0-0034205310
РИНЦ: 13347124
Chemical Abstracts: 2000:434631
Chemical Abstracts (print): 133:230607
OpenAlex: W2034855965
Цитирование в БД: Пока нет цитирований
Альметрики: