Diffraction Method for Structure Investigations of Semiconductor Heterosystems Using Synchrotron Variable Wavelength | Sciact - CRIS-system of Boreskov Institute of Catalysis

Diffraction Method for Structure Investigations of Semiconductor Heterosystems Using Synchrotron Variable Wavelength Full article

Conference

XII National Synchrotron Radiation Conference
13-18 Jul 1998 , Новосибирск

Journal

Nuclear Instruments and Methods in Physics Research Section A
ISSN: 0168-9002

Output data

Year: 2000, Volume: 448, Number: 1-2, Pages: 282-285 Pages count : 4 DOI: 10.1016/S0168-9002(00)00227-8

Tags

Crystal lattices; Diffraction; Epitaxial growth; Molecular beam epitaxy; Numerical methods; Semiconducting aluminum compounds; Semiconductor device structures; Semiconductor superlattices; Synchrotron radiation; X ray diffraction analysis

Authors

Trukhanov E.M. ¹ , Revenko M.A. ¹ , Amirzhanov R.M. ¹ , Fedorov A.A. ¹ , Kolesnikov A.V. ¹ , Nikitenko S.G. ² , Vasilenko A.P. ¹

Affiliations

1	Institute of Semiconductors Physics, Academy of Sciences of Russia, Prosp-Lavrentyeva 13, Siberian Branch, 630090 Novosibirsk-90, Russia
2	Institute of Catalysis, Academy of Sciences of Russia, Siberian Branch, 630090 Novosibirsk-90, Russia

Funding (4)

1	Russian Foundation for Basic Research	00-02-17485
2	Russian Foundation for Basic Research	00-02-17994
3	The Ministry of Education and Science of the Russian Federation	97-2025
4	The Ministry of Education and Science of the Russian Federation	99-3015

The synchrotron investigation method is presented for structure research of semiconductor heterosystems with homogeneous layers and superlattices using the variable wavelength of a synchrotron radiation beam passing at the immobile sample. The used experimental procedure is potentially suitable for in situ X-ray diffractometry during the growth of epitaxial layers. For the proposed procedure, the equations are derived for the first time to measure tetragonal crystal lattice distortions and superlattice period distribution. The experimental results have been obtained for heterosystems with layers of AlxGa1−xAs grown by molecular-beam epitaxy (MBE) onto GaAs substrates.

Trukhanov E.M. , Revenko M.A. , Amirzhanov R.M. , Fedorov A.A. , Kolesnikov A.V. , Nikitenko S.G. , Vasilenko A.P.
Diffraction Method for Structure Investigations of Semiconductor Heterosystems Using Synchrotron Variable Wavelength
Nuclear Instruments and Methods in Physics Research Section A. 2000. V.448. N1-2. P.282-285. DOI: 10.1016/S0168-9002(00)00227-8 WOS Scopus РИНЦ ANCAN OpenAlex

Published print:	Jun 21, 2000
Published online:	Jun 22, 2000

Web of science:	WOS:000088282500057
Scopus:	2-s2.0-0034205310
Elibrary:	13347124
Chemical Abstracts:	2000:434631
Chemical Abstracts (print):	133:230607
OpenAlex:	W2034855965

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