Composition and Structure of Hafnia Films on Silicon | Sciact - CRIS-system of Boreskov Institute of Catalysis

Composition and Structure of Hafnia Films on Silicon Full article

Journal

Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172

Output data

Year: 2008, Volume: 44, Number: 9, Pages: 965-970 Pages count : 6 DOI: 10.1134/S0020168508090124

Tags

Hafnium; Native Oxide Layer; Ellipsometry Data; Hafnium Silicate; Equilibrium Phase Assemblage

Authors

Smirnova T.P. ¹ , Kaichev V.V. ² , Yakovkina L.V. ¹ , Kosyakov V.I. ¹ , Beloshapkin S.A. ³ , Kuznetsov F.A. ¹ , Lebedev M.S. ¹ , Gritsenko V.A. ⁴

Affiliations

1	Nikolaev Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090, Russia
2	Boreskov Institute of Catalysis, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 5, Novosibirsk, 630090, Russia
3	Materials and Surface Science Institute, University of Limerick, Limerick, Ireland
4	Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

Funding (3)

1	Russian Foundation for Basic Research	05-03-32393
2	Siberian Branch of the Russian Academy of Sciences	97
3	Council for Grants of the President of the Russian Federation	НШ-636.2008.3

Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO2 deposition onto silicon, the native oxide reacts with the HfO2 deposit to form an amorphous intermediate layer which differs in refractive index (1.6) from both HfO2 (1.9–2.0) and SiO2 (1.46). Thermodynamic analysis of the Si–SiO2–HfO2–Hf system shows that Si is in equilibrium with Si/HfO2 – y only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO4/HfO2 – y.

Smirnova T.P. , Kaichev V.V. , Yakovkina L.V. , Kosyakov V.I. , Beloshapkin S.A. , Kuznetsov F.A. , Lebedev M.S. , Gritsenko V.A.
Composition and Structure of Hafnia Films on Silicon
Inorganic Materials. 2008. V.44. N9. P.965-970. DOI: 10.1134/S0020168508090124 WOS Scopus РИНЦ ANCAN OpenAlex

Смирнова Т.П. , Каичев В.В. , Яковкина Л.В. , Косяков В.И. , Белошапкин С.А. , Кузнецов Ф.А. , Лебедев М.С. , Гриценко В.А.
Состав и строение пленок оксида гафния на кремнии
Неорганические материалы. 2008. Т.44. №9. С.1086-1092. РИНЦ

Submitted:	Oct 11, 2006
Accepted:	Jun 22, 2007
Published online:	Aug 30, 2008
Published print:	Sep 1, 2008

Web of science:	WOS:000258839600012
Scopus:	2-s2.0-50849105104
Elibrary:	13593266
Chemical Abstracts:	2008:1055854
Chemical Abstracts (print):	150:110130
OpenAlex:	W2076961298

DB	Citing
Web of science	25
Scopus	28
Elibrary	26
OpenAlex	30