ICP-AES Analysis of High-Purity Silicon Full article
| Journal |
Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172 |
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| Output data | Year: 2013, Volume: 49, Number: 14, Pages: 1283-1287 Pages count : 5 DOI: 10.1134/S0020168513140082 | ||||
| Tags | detection limits of impurities, high-purity silicon, impurity concentration, multielement characterization | ||||
| Authors |
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| Affiliations |
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Funding (1)
| 1 | Президиум РАН | 2 |
Abstract:
An ICPAES procedure for analyzing high-purity silicon, which is implemented on uptodate standard equipment and intended to determine 44 impurities with detection limits of n × 10–8–n × 10–6 wt % in silicon, is described. The procedure is compared with ICPAES procedures, conforming to GOST (State Standard) and published in the literature, in quantity of determined impurities and their detection limits.
Cite:
Shaverina A.V.
, Tsygankova A.R.
, Shelpakova I.R.
, Saprykin A.I.
ICP-AES Analysis of High-Purity Silicon
Inorganic Materials. 2013. V.49. N14. P.1283-1287. DOI: 10.1134/S0020168513140082 WOS Scopus РИНЦ ANCAN OpenAlex
ICP-AES Analysis of High-Purity Silicon
Inorganic Materials. 2013. V.49. N14. P.1283-1287. DOI: 10.1134/S0020168513140082 WOS Scopus РИНЦ ANCAN OpenAlex
Original:
Шаверина А.В.
, Цыганкова А.Р.
, Шелпакова И.Р.
, Сапрыкин А.И.
АЭС-ИСП анализ высокочистого кремния
Заводская лаборатория. Диагностика материалов. 2012. Т.78. №4. С.9-13. РИНЦ
АЭС-ИСП анализ высокочистого кремния
Заводская лаборатория. Диагностика материалов. 2012. Т.78. №4. С.9-13. РИНЦ
Dates:
| Submitted: | Mar 1, 2011 |
| Published online: | Nov 26, 2013 |
| Published print: | Dec 1, 2013 |
Identifiers:
| Web of science: | WOS:000327798900005 |
| Scopus: | 2-s2.0-84890501877 |
| Elibrary: | 21901139 |
| Chemical Abstracts: | 2013:1855705 |
| Chemical Abstracts (print): | 162:88086 |
| OpenAlex: | W2071379682 |