AlN/GaN Heterostructures for Normally-Off Transistors | Sciact - CRIS-system of Boreskov Institute of Catalysis

AlN/GaN Heterostructures for Normally-Off Transistors Full article

Journal

Semiconductors
ISSN: 1063-7826 , E-ISSN: 1090-6479

Output data

Year: 2017, Volume: 51, Number: 3, Pages: 379-386 Pages count : 8 DOI: 10.1134/S1063782617030277

Tags

ELECTRON-MOBILITY TRANSISTORS; AlGaN/GaN HETEROSTRUCTURES; HEMTS; ENHANCEMENT; MODE; VOLTAGE; F(T)

Authors

Zhuravlev K.S. ^1,2 , Malin T.V. ¹ , Mansurov V.G. ¹ , Tereshenko O.E. ^1,2 , Abgaryan K.K. ³ , Reviznikov D.L. ³ , Zemlyakov V.E. ⁴ , Egorkin V.I. ⁴ , Parnes Ya.M. ⁵ , Tikhomirov V.G. ⁵ , Prosvirin I.P. ⁶

Affiliations

1	Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090 Russia
2	Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia
3	Dorodnicyn Computing Centre of the Russian Academy of Sciences, ul. Vavilova 40, Moscow, 119333 Russia
4	National Research University of Electronic Technology (MIET), 4806 proezd 5, Zelenograd, Moscow, 124498 Russia
5	Joint Stock Company “Svetlana-Electronpribor”, pr. Engelsa 27, korp. 164, St. Petersburg, 194156 Russia
6	Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrent’eva 5, Novosibirsk, 630090 Russia

Funding (1)

The Ministry of Education and Science of the Russian Federation

14.578.21.0062 (RFMEFI57814X0062)

The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

Zhuravlev K.S. , Malin T.V. , Mansurov V.G. , Tereshenko O.E. , Abgaryan K.K. , Reviznikov D.L. , Zemlyakov V.E. , Egorkin V.I. , Parnes Y.M. , Tikhomirov V.G. , Prosvirin I.P.
AlN/GaN Heterostructures for Normally-Off Transistors
Semiconductors. 2017. V.51. N3. P.379-386. DOI: 10.1134/S1063782617030277 WOS Scopus РИНЦ AN OpenAlex

Журавлев К.С. , Малин Т.В. , Мансуров В.Г. , Терещенко О.Е. , Абгарян К.К. , Ревизников Д.Л. , Земляков В.Е. , Егоркин В.И. , Парнес Я.М. , Тихомиров В.Г. , Просвирин И.П.
AlN/GaN-гетероструктуры для нормально закрытых транзисторов

Физика и техника полупроводников. 2017. Т.51. №3. С.395-402. DOI: 10.21883/FTP.2017.03.44215.8287RSCI РИНЦ OpenAlex

Submitted:	Aug 30, 2016
Accepted:	Sep 5, 2016
Published print:	Mar 1, 2017
Published online:	Mar 16, 2017

Web of science:	WOS:000397924100021
Scopus:	2-s2.0-85015624299
Elibrary:	29496813
Chemical Abstracts:	2017:444533
OpenAlex:	W2619460951

DB	Citing
Web of science	4
Scopus	5
Elibrary	6
OpenAlex	7