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Composition and Morphology of Fluorinated Anodic Oxides on InAs (1 1 1)A Surface Научная публикация

Конференция 6th International Workshop on Semiconductor Surface Passivation
13-18 сент. 2009 , Zakopane
Журнал Applied Surface Science
ISSN: 0169-4332
Вых. Данные Год: 2010, Том: 256, Номер: 19, Страницы: 5722-5726 Страниц : 5 DOI: 10.1016/j.apsusc.2010.03.100
Ключевые слова Anodic oxide, InAs, Interface, Passivation, Phase composition, Surface states
Авторы Valisheva N.A. 1 , Tereshchenko O.E. 1,2 , Prosvirin I.P. 3 , Levtsova T.A. 1 , Rodjakina E.E. 1 , Kovchavcev A.V. 1
Организации
1 Novosibirsk Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation
2 Novosibirsk State University, Novosibirsk 630090, Russian Federation
3 Boreskov Institute of Catalysis, SB RAS, Novosibirsk, 630090, Russian Federation

Информация о финансировании (2)

1 Российский фонд фундаментальных исследований 09-02-01045
2 Сибирское отделение Российской академии наук 99

Реферат: The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) in order to reveal the passivation mechanism of fluorine on the FAO/InAs(1 1 1)A interface. The formation of the highest oxidation form of As+5 and passivation of defects in the FAO layers during the fluorination process explain the reduction of the density of surface states and unpinning of the Fermi level on the fluorinated AO/InAs(1 1 1)A interface.
Библиографическая ссылка: Valisheva N.A. , Tereshchenko O.E. , Prosvirin I.P. , Levtsova T.A. , Rodjakina E.E. , Kovchavcev A.V.
Composition and Morphology of Fluorinated Anodic Oxides on InAs (1 1 1)A Surface
Applied Surface Science. 2010. V.256. N19. P.5722-5726. DOI: 10.1016/j.apsusc.2010.03.100 WOS Scopus РИНЦ CAPlusCA OpenAlex
Даты:
Опубликована online: 25 мар. 2010 г.
Опубликована в печати: 15 июл. 2010 г.
Идентификаторы БД:
Web of science: WOS:000278305300005
Scopus: 2-s2.0-77953136440
РИНЦ: 15324785
Chemical Abstracts: 2010:697731
Chemical Abstracts (print): 153:296785
OpenAlex: W1974222788
Цитирование в БД:
БД Цитирований
Web of science 11
Scopus 11
РИНЦ 12
OpenAlex 11
Альметрики: