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Composition and Morphology of Fluorinated Anodic Oxides on InAs (1 1 1)A Surface Full article

Conference 6th International Workshop on Semiconductor Surface Passivation
13-18 Sep 2009 , Zakopane
Journal Applied Surface Science
ISSN: 0169-4332
Output data Year: 2010, Volume: 256, Number: 19, Pages: 5722-5726 Pages count : 5 DOI: 10.1016/j.apsusc.2010.03.100
Tags Anodic oxide, InAs, Interface, Passivation, Phase composition, Surface states
Authors Valisheva N.A. 1 , Tereshchenko O.E. 1,2 , Prosvirin I.P. 3 , Levtsova T.A. 1 , Rodjakina E.E. 1 , Kovchavcev A.V. 1
Affiliations
1 Novosibirsk Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation
2 Novosibirsk State University, Novosibirsk 630090, Russian Federation
3 Boreskov Institute of Catalysis, SB RAS, Novosibirsk, 630090, Russian Federation

Funding (2)

1 Russian Foundation for Basic Research 09-02-01045
2 Siberian Branch of the Russian Academy of Sciences 99

Abstract: The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) in order to reveal the passivation mechanism of fluorine on the FAO/InAs(1 1 1)A interface. The formation of the highest oxidation form of As+5 and passivation of defects in the FAO layers during the fluorination process explain the reduction of the density of surface states and unpinning of the Fermi level on the fluorinated AO/InAs(1 1 1)A interface.
Cite: Valisheva N.A. , Tereshchenko O.E. , Prosvirin I.P. , Levtsova T.A. , Rodjakina E.E. , Kovchavcev A.V.
Composition and Morphology of Fluorinated Anodic Oxides on InAs (1 1 1)A Surface
Applied Surface Science. 2010. V.256. N19. P.5722-5726. DOI: 10.1016/j.apsusc.2010.03.100 WOS Scopus РИНЦ ANCAN OpenAlex
Dates:
Published online: Mar 25, 2010
Published print: Jul 15, 2010
Identifiers:
Web of science: WOS:000278305300005
Scopus: 2-s2.0-77953136440
Elibrary: 15324785
Chemical Abstracts: 2010:697731
Chemical Abstracts (print): 153:296785
OpenAlex: W1974222788
Citing:
DB Citing
Web of science 11
Scopus 11
Elibrary 12
OpenAlex 11
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