Composition and Morphology of Fluorinated Anodic Oxides on InAs (1 1 1)A Surface Full article
Conference |
6th International Workshop on Semiconductor Surface Passivation 13-18 Sep 2009 , Zakopane |
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Journal |
Applied Surface Science
ISSN: 0169-4332 |
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Output data | Year: 2010, Volume: 256, Number: 19, Pages: 5722-5726 Pages count : 5 DOI: 10.1016/j.apsusc.2010.03.100 | ||||||
Tags | Anodic oxide, InAs, Interface, Passivation, Phase composition, Surface states | ||||||
Authors |
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Affiliations |
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Funding (2)
1 | Russian Foundation for Basic Research | 09-02-01045 |
2 | Siberian Branch of the Russian Academy of Sciences | 99 |
Abstract:
The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) in order to reveal the passivation mechanism of fluorine on the FAO/InAs(1 1 1)A interface. The formation of the highest oxidation form of As+5 and passivation of defects in the FAO layers during the fluorination process explain the reduction of the density of surface states and unpinning of the Fermi level on the fluorinated AO/InAs(1 1 1)A interface.
Cite:
Valisheva N.A.
, Tereshchenko O.E.
, Prosvirin I.P.
, Levtsova T.A.
, Rodjakina E.E.
, Kovchavcev A.V.
Composition and Morphology of Fluorinated Anodic Oxides on InAs (1 1 1)A Surface
Applied Surface Science. 2010. V.256. N19. P.5722-5726. DOI: 10.1016/j.apsusc.2010.03.100 WOS Scopus РИНЦ ANCAN OpenAlex
Composition and Morphology of Fluorinated Anodic Oxides on InAs (1 1 1)A Surface
Applied Surface Science. 2010. V.256. N19. P.5722-5726. DOI: 10.1016/j.apsusc.2010.03.100 WOS Scopus РИНЦ ANCAN OpenAlex
Dates:
Published online: | Mar 25, 2010 |
Published print: | Jul 15, 2010 |
Identifiers:
Web of science: | WOS:000278305300005 |
Scopus: | 2-s2.0-77953136440 |
Elibrary: | 15324785 |
Chemical Abstracts: | 2010:697731 |
Chemical Abstracts (print): | 153:296785 |
OpenAlex: | W1974222788 |