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Terbium Oxide Films Grown by Chemical Vapor Deposition from Terbium(III) Dipivaloylmethanate Научная публикация

Журнал Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172
Вых. Данные Год: 2014, Том: 50, Номер: 4, Страницы: 379-386 Страниц : 8 DOI: 10.1134/S0020168514040037
Ключевые слова Chemical Vapor Deposition; Terbium; Raman Spectroscopy Data; Terbium Oxide; Decrease Substrate Temperature
Авторы Belaya S.V. 1 , Bakovets V.V. 1 , Boronin A.I. 2 , Koshcheev S.V. 2 , Lobzareva M.N. 1 , Korolkov I.V. 1 , Stabnikov P.A. 1
Организации
1 Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, 3, Acad. Lavrentiev Ave., Novosibirsk, 630090, Russia
2 Boreskov Institute of Catalysis, Siberian Branch of Russian Academy of Sciences, 5, Acad. Lavrentiev Ave., Novosibirsk, 630090, Russia

Реферат: Terbium oxide films have been grown on Si(111) substrates by decomposition of Tb(dpm)3 vapor in argon flow at Tb(dpm)3 source temperatures of 170 and 190°C and substrate temperatures from 470 to 550°C. The films have been annealed in air at temperatures of 400, 650, and 800°C. Xray diffraction characterization results show that the films grown by chemical vapor deposition consist of cubic Tb2O3. The films annealed in air at 650 and 800°C are isostructural with Tb4O7, and those annealed at 400°C are isostructural with Tb11O20. According to Xray photoelectron spectroscopy data, the 9nmthick surface layer of the Tb2O3 film has the correct stoichiometry O : Tb = 1.48, whereas the film annealed at 800°C has O : Tb = 1.85. Raman spectroscopy data demonstrate that the concentration of carboncontaining species on the surface of the films decreases with decreasing substrate temperature and can be brought to zero by air annealing at 800°C.
Библиографическая ссылка: Belaya S.V. , Bakovets V.V. , Boronin A.I. , Koshcheev S.V. , Lobzareva M.N. , Korolkov I.V. , Stabnikov P.A.
Terbium Oxide Films Grown by Chemical Vapor Deposition from Terbium(III) Dipivaloylmethanate
Inorganic Materials. 2014. V.50. N4. P.379-386. DOI: 10.1134/S0020168514040037 WOS Scopus РИНЦ CAPlusCA OpenAlex
Оригинальная: Белая С.В. , Баковец В.В. , Боронин А.И. , Кощеев С.В. , Лобзарева М.Н. , Корольков И.В. , Стабников П.А.
Пленки оксидов тербия, полученные химическим осаждением из паров трис-дипивалоилметаната тербия
Неорганические материалы. 2014. Т.50. №4. С.410-417. DOI: 10.7868/S0002337X14040034 РИНЦ OpenAlex
Даты:
Поступила в редакцию: 16 авг. 2013 г.
Опубликована online: 18 мар. 2014 г.
Опубликована в печати: 1 апр. 2014 г.
Идентификаторы БД:
Web of science: WOS:000333131200010
Scopus: 2-s2.0-84897081397
РИНЦ: 21869605
Chemical Abstracts: 2014:440661
Chemical Abstracts (print): 162:331031
OpenAlex: W2128218011
Цитирование в БД:
БД Цитирований
Web of science 22
Scopus 25
РИНЦ 21
OpenAlex 26
Альметрики: