Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation | Sciact - CRIS-система Института катализа

Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation Научная публикация

Журнал

Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118

Вых. Данные

Год: 2014, Том: 105, Страницы: 161601-161605 Страниц : 5 DOI: 10.1063/1.4899137

Ключевые слова

Capacitance; Dielectric devices; Electrochemical oxidation; Electrolytes; III-V semiconductors; Indium arsenide; Interface states; Metals; MOS capacitors; Narrow band gap semiconductors; Oxide semiconductors; Passivation; Transistors; Wide band gap semiconductors

Авторы

Valisheva N.A. ¹ , Aksenov M.S. ¹ , Golyashov V.A. ¹ , Levtsova T.A. ¹ , Kovchavtsev A.P. ¹ , Gutakovskii A.K. ^1,2 , Khandarkhaeva S.E. ² , Kalinkin A.V. ³ , Prosvirin I.P. ^2,3 , Bukhtiyarov V.I. ^2,3 , Tereshchenko O.E. ^1,2

Организации

1	Rzhanov Institute of Semiconductor Physics, SB RAS, 13, Lavrentiev Ave., Novosibirsk 630090, Russian Federation
2	Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090, Russian Federation
3	Boreskov Institute of Catalysis, SB RAS, 5, Lavrentiev Ave., Novosibirsk 630090, Russian Federation

Информация о финансировании (2)

1	Министерство образования и науки Российской Федерации	14.621.21.0004 (RFMEFI62114X0004)
2	Российский научный фонд	14-22-00143

In this letter, we present structural, compositional, and electrical characteristics of anodic oxide layer-based metal-oxide-semiconductor (MOS) capacitors on n-type InAs(111)A, along with the effect of a thin fluorinated interfacial passivation layer. Electrochemical oxidation in acid electrolyte with addition of fluorine (NH4F) led to the formation of oxygen free well-ordered wide gap fluorinated interfacial layer at InAs(111)A with the fixed charge (Qfix) and density of interface states (Dit) in the range of (4–6)_1010cm_2 and (2–12)_1010eV_1cm_2, respectively. We found that MOS capacitors showed excellent capacitance-voltage characteristics with very small frequency dispersion (<1% and <15 mV). Fluorinated interfacial layer consists of crystalline isostructural compound with the InAs substrate, which remains intact with the atomic smoothness and sharpness that explain unpinned behavior of the Fermi level.

Valisheva N.A. , Aksenov M.S. , Golyashov V.A. , Levtsova T.A. , Kovchavtsev A.P. , Gutakovskii A.K. , Khandarkhaeva S.E. , Kalinkin A.V. , Prosvirin I.P. , Bukhtiyarov V.I. , Tereshchenko O.E.
Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation
Applied Physics Letters. 2014. V.105. P.161601-161605. DOI: 10.1063/1.4899137 WOS Scopus РИНЦ CAPlusCA OpenAlex

Поступила в редакцию:	24 авг. 2014 г.
Принята к публикации:	11 окт. 2014 г.
Опубликована в печати:	20 окт. 2014 г.
Опубликована online:	21 окт. 2014 г.

Web of science:	WOS:000344363000014
Scopus:	2-s2.0-84908191309
РИНЦ:	23995265
Chemical Abstracts:	2014:1779819
Chemical Abstracts (print):	161:675471
OpenAlex:	W1969022416

БД	Цитирований
Web of science	11
Scopus	10
РИНЦ	14
OpenAlex	12