Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation Научная публикация
| Журнал |
Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118 |
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| Вых. Данные | Год: 2014, Том: 105, Страницы: 161601-161605 Страниц : 5 DOI: 10.1063/1.4899137 | ||||||
| Ключевые слова | Capacitance; Dielectric devices; Electrochemical oxidation; Electrolytes; III-V semiconductors; Indium arsenide; Interface states; Metals; MOS capacitors; Narrow band gap semiconductors; Oxide semiconductors; Passivation; Transistors; Wide band gap semiconductors | ||||||
| Авторы |
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| Организации |
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Информация о финансировании (2)
| 1 | Российский научный фонд | 14-22-00143 |
| 2 | Министерство образования и науки Российской Федерации | 14.621.21.0004 (RFMEFI62114X0004) |
Реферат:
In this letter, we present structural, compositional, and electrical characteristics of anodic oxide layer-based metal-oxide-semiconductor (MOS) capacitors on n-type InAs(111)A, along with the effect of a thin fluorinated interfacial passivation layer. Electrochemical oxidation in acid electrolyte with addition of fluorine (NH4F) led to the formation of oxygen free well-ordered wide gap fluorinated interfacial layer at InAs(111)A with the fixed charge (Qfix) and density of interface states (Dit) in the range of (4–6)_1010cm_2 and (2–12)_1010eV_1cm_2, respectively. We found that MOS capacitors showed excellent capacitance-voltage characteristics with very small frequency dispersion (<1% and <15 mV). Fluorinated interfacial layer consists of crystalline isostructural compound with the InAs substrate, which remains intact with the atomic smoothness and sharpness that explain unpinned behavior of the Fermi level.
Библиографическая ссылка:
Valisheva N.A.
, Aksenov M.S.
, Golyashov V.A.
, Levtsova T.A.
, Kovchavtsev A.P.
, Gutakovskii A.K.
, Khandarkhaeva S.E.
, Kalinkin A.V.
, Prosvirin I.P.
, Bukhtiyarov V.I.
, Tereshchenko O.E.
Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation
Applied Physics Letters. 2014. V.105. P.161601-161605. DOI: 10.1063/1.4899137 WOS Scopus РИНЦ OpenAlex CAPlusCA
Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation
Applied Physics Letters. 2014. V.105. P.161601-161605. DOI: 10.1063/1.4899137 WOS Scopus РИНЦ OpenAlex CAPlusCA
Даты:
| Поступила в редакцию: | 24 авг. 2014 г. |
| Принята к публикации: | 11 окт. 2014 г. |
| Опубликована в печати: | 20 окт. 2014 г. |
| Опубликована online: | 21 окт. 2014 г. |
Идентификаторы БД:
| ≡ Web of science: | WOS:000344363000014 |
| ≡ Scopus: | 2-s2.0-84908191309 |
| ≡ РИНЦ: | 23995265 |
| ≡ OpenAlex: | W1969022416 |
| ≡ Chemical Abstracts: | 2014:1779819 |
| ≡ Chemical Abstracts (print): | 161:675471 |