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The Atomic and Electronic Structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La Films Научная публикация

Журнал Journal of Science: Advanced Materials and Devices
ISSN: 2468-2179
Вых. Данные Год: 2021, Том: 6, Номер: 4, Страницы: 595-600 Страниц : 6 DOI: 10.1016/j.jsamd.2021.08.001
Ключевые слова FeRAM; XPS; Oxygen vacancy; Electronic structure; HfZrO
Авторы Perevalov Timofey V. 1,2 , Prosvirin Igor P. 3 , Suprun Evgenii A. 3 , Mehmood Furqan 5 , Mikolajick Thomas 4,5 , Schroeder Uwe 5 , Gritsenko Vladimir A. 1,2
Организации
1 Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090, Novosibirsk, Russia
2 Novosibirsk State University, 2 Pirogov Str., 630090 Novosibirsk, Russia
3 Boreskov Institute of Catalysis, SB RAS, 5 Lavrentiev Ave., 630090, Novosibirsk, Russia
4 NaMLab gGmbH, Noethnitzer Str. 64 a, 01187 Dresden, Germany
5 Chair of Nanoelectronics, TU Dresden, 01062 Dresden, Germany

Информация о финансировании (3)

1 Российский фонд фундаментальных исследований 20-57-12003 (АААА-А20-120012190060-2)
2 Министерство науки и высшего образования Российской Федерации (с 15 мая 2018) FWGW-2021-0003 (121052600081-2)(0242-2021-0003)
3 German Research Foundation 430054035

Реферат: HfxZr1-xO2 and lanthanum-doped HfxZr1-xO2:La thin films are candidates for applications in ferroelectric random-access memory. Here, we explore the atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La thin films grown by atomic layer deposition. Using X-ray photoelectron spectroscopy, it was found that the oxides under study have an almost identical electronic structure and a bandgap of about 5.4 eV. The Hf0.5Zr0.5O2:La film was shown to consist of the mixture of Hf0.5Zr0.5O2 and La2O3 phases. The bombardment with argon ions of the studied films leads to oxygen vacancy generation in the near-surface layer. The oxygen vacancy concentrations in the bombarded films were evaluated from the comparison of experimental valence band photoelectron spectra with the theoretical ones calculated using the density functional theory.
Библиографическая ссылка: Perevalov T.V. , Prosvirin I.P. , Suprun E.A. , Mehmood F. , Mikolajick T. , Schroeder U. , Gritsenko V.A.
The Atomic and Electronic Structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La Films
Journal of Science: Advanced Materials and Devices. 2021. V.6. N4. P.595-600. DOI: 10.1016/j.jsamd.2021.08.001 WOS Scopus РИНЦ CAPlusCA OpenAlex
Даты:
Поступила в редакцию: 19 апр. 2021 г.
Принята к публикации: 3 авг. 2021 г.
Опубликована online: 11 авг. 2021 г.
Опубликована в печати: 1 дек. 2021 г.
Идентификаторы БД:
Web of science: WOS:000709514200011
Scopus: 2-s2.0-85122726054
РИНЦ: 48127652
Chemical Abstracts: 2022:322103
Chemical Abstracts (print): 184:81981
OpenAlex: W3195658329
Цитирование в БД:
БД Цитирований
Web of science 18
Scopus 19
РИНЦ 17
OpenAlex 17
Альметрики: