The Atomic and Electronic Structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La Films | Sciact - CRIS-system of Boreskov Institute of Catalysis

The Atomic and Electronic Structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La Films Full article

Journal

Journal of Science: Advanced Materials and Devices
ISSN: 2468-2179

Output data

Year: 2021, Volume: 6, Number: 4, Pages: 595-600 Pages count : 6 DOI: 10.1016/j.jsamd.2021.08.001

Tags

FeRAM; XPS; Oxygen vacancy; Electronic structure; HfZrO

Authors

Perevalov Timofey V. ^1,2 , Prosvirin Igor P. ³ , Suprun Evgenii A. ³ , Mehmood Furqan ⁵ , Mikolajick Thomas ^4,5 , Schroeder Uwe ⁵ , Gritsenko Vladimir A. ^1,2

Affiliations

1	Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090, Novosibirsk, Russia
2	Novosibirsk State University, 2 Pirogov Str., 630090 Novosibirsk, Russia
3	Boreskov Institute of Catalysis, SB RAS, 5 Lavrentiev Ave., 630090, Novosibirsk, Russia
4	NaMLab gGmbH, Noethnitzer Str. 64 a, 01187 Dresden, Germany
5	Chair of Nanoelectronics, TU Dresden, 01062 Dresden, Germany

Funding (3)

1	Russian Foundation for Basic Research	20-57-12003 (АААА-А20-120012190060-2)
2	Ministry of Science and Higher Education of the Russian Federation	FWGW-2021-0003 (121052600081-2)(0242-2021-0003)
3	German Research Foundation	430054035

HfxZr1-xO2 and lanthanum-doped HfxZr1-xO2:La thin films are candidates for applications in ferroelectric random-access memory. Here, we explore the atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La thin films grown by atomic layer deposition. Using X-ray photoelectron spectroscopy, it was found that the oxides under study have an almost identical electronic structure and a bandgap of about 5.4 eV. The Hf0.5Zr0.5O2:La film was shown to consist of the mixture of Hf0.5Zr0.5O2 and La2O3 phases. The bombardment with argon ions of the studied films leads to oxygen vacancy generation in the near-surface layer. The oxygen vacancy concentrations in the bombarded films were evaluated from the comparison of experimental valence band photoelectron spectra with the theoretical ones calculated using the density functional theory.

Perevalov T.V. , Prosvirin I.P. , Suprun E.A. , Mehmood F. , Mikolajick T. , Schroeder U. , Gritsenko V.A.
The Atomic and Electronic Structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La Films
Journal of Science: Advanced Materials and Devices. 2021. V.6. N4. P.595-600. DOI: 10.1016/j.jsamd.2021.08.001 WOS Scopus РИНЦ ANCAN OpenAlex

Submitted:	Apr 19, 2021
Accepted:	Aug 3, 2021
Published online:	Aug 11, 2021
Published print:	Dec 1, 2021

Web of science:	WOS:000709514200011
Scopus:	2-s2.0-85122726054
Elibrary:	48127652
Chemical Abstracts:	2022:322103
Chemical Abstracts (print):	184:81981
OpenAlex:	W3195658329

DB	Citing
Web of science	18
Scopus	20
Elibrary	14
OpenAlex	17