Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers | Sciact - CRIS-система Института катализа

Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers Научная публикация

Журнал

Journal of Applied Physics
ISSN: 0021-8979 , E-ISSN: 1089-7550

Вых. Данные

Год: 2022, Том: 131, Номер: 8, Номер статьи : 085301, Страниц : 9 DOI: 10.1063/5.0078405

Ключевые слова

Alumina; Aluminum oxide; Anodic oxidation; Fluorine; Interface states; Passivation

Авторы

Aksenov M.S. ^1,2 , Valisheva N.A. ¹ , Gorshkov D.V. ¹ , Sidorov G.Y. ¹ , Prosvirin I.P. ³ , Gutakovskii A.K. ^1,2

Организации

1	Rzhanov Institute of Semiconductor Physics SBRAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russian Federation
2	Novosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, Russian Federation
3	Boreskov Institute of Catalysis SBRAS, 5 Lavrentiev Aven., Novosibirsk 630090, Russian Federation

Информация о финансировании (1)

Российский фонд фундаментальных исследований

20-02-00516 (АААА-А20-120032590012-5)

The morphology, chemical composition, and electronic properties of Al2O3/InGaAs interfaces with and without anodic oxide layers, formed in DC plasma (O2, Ar) with different contents of the fluorinating component (CF4), were studied. It is shown that thin fluorinated anodic oxide layers, in combination with annealing at 300 °C, reduce the density of interface states by a factor of 3-4 over the entire bandgap. The minimum state density values near the midgap determined by the Terman method are about 2 × 1012 eV-1 cm-2. However, it is demonstrated that, in contrast to the Al2O3/InGaAs interface, the interface with a fluorinated oxide is not stable and degrades when heated above 300 °C. © 2022 Author(s).

Aksenov M.S. , Valisheva N.A. , Gorshkov D.V. , Sidorov G.Y. , Prosvirin I.P. , Gutakovskii A.K.
Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers
Journal of Applied Physics. 2022. V.131. N8. 085301 :1-9. DOI: 10.1063/5.0078405 WOS Scopus РИНЦ CAPlusCA OpenAlex

Поступила в редакцию:	12 нояб. 2021 г.
Принята к публикации:	7 февр. 2022 г.
Опубликована online:	23 февр. 2022 г.
Опубликована в печати:	28 февр. 2022 г.

Web of science:	WOS:000761052700001
Scopus:	2-s2.0-85125568855
РИНЦ:	48187830
Chemical Abstracts:	2022:490805
Chemical Abstracts (print):	178:305180
OpenAlex:	W4212830595

БД	Цитирований
OpenAlex	1