Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers | Sciact - CRIS-system of Boreskov Institute of Catalysis

Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers Full article

Journal

Journal of Applied Physics
ISSN: 0021-8979 , E-ISSN: 1089-7550

Output data

Year: 2022, Volume: 131, Number: 8, Article number : 085301, Pages count : 9 DOI: 10.1063/5.0078405

Tags

Alumina; Aluminum oxide; Anodic oxidation; Fluorine; Interface states; Passivation

Authors

Aksenov M.S. ^1,2 , Valisheva N.A. ¹ , Gorshkov D.V. ¹ , Sidorov G.Y. ¹ , Prosvirin I.P. ³ , Gutakovskii A.K. ^1,2

Affiliations

1	Rzhanov Institute of Semiconductor Physics SBRAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russian Federation
2	Novosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, Russian Federation
3	Boreskov Institute of Catalysis SBRAS, 5 Lavrentiev Aven., Novosibirsk 630090, Russian Federation

Funding (1)

Russian Foundation for Basic Research

20-02-00516 (АААА-А20-120032590012-5)

The morphology, chemical composition, and electronic properties of Al2O3/InGaAs interfaces with and without anodic oxide layers, formed in DC plasma (O2, Ar) with different contents of the fluorinating component (CF4), were studied. It is shown that thin fluorinated anodic oxide layers, in combination with annealing at 300 °C, reduce the density of interface states by a factor of 3-4 over the entire bandgap. The minimum state density values near the midgap determined by the Terman method are about 2 × 1012 eV-1 cm-2. However, it is demonstrated that, in contrast to the Al2O3/InGaAs interface, the interface with a fluorinated oxide is not stable and degrades when heated above 300 °C. © 2022 Author(s).

Aksenov M.S. , Valisheva N.A. , Gorshkov D.V. , Sidorov G.Y. , Prosvirin I.P. , Gutakovskii A.K.
Al2O3/InGaAs Interface Passivation by Fluorine-Containing Anodic Layers
Journal of Applied Physics. 2022. V.131. N8. 085301 :1-9. DOI: 10.1063/5.0078405 WOS Scopus РИНЦ ANCAN OpenAlex

Submitted:	Nov 12, 2021
Accepted:	Feb 7, 2022
Published online:	Feb 23, 2022
Published print:	Feb 28, 2022

Web of science:	WOS:000761052700001
Scopus:	2-s2.0-85125568855
Elibrary:	48187830
Chemical Abstracts:	2022:490805
Chemical Abstracts (print):	178:305180
OpenAlex:	W4212830595

DB	Citing
OpenAlex	1