Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma Full article
| Journal |
Journal of Experimental and Theoretical Physics Letters (JETP Letters)
ISSN: 0021-3640 , E-ISSN: 1090-6487 |
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| Output data | Year: 2022, Volume: 115, Number: 2, Pages: 79-83 Pages count : 5 DOI: 10.1134/s0021364022020084 | ||||||
| Tags | ATOMIC LAYER DEPOSITION; FILMS | ||||||
| Authors |
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| Affiliations |
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Funding (2)
| 1 | Russian Science Foundation | 19-19-00286 (АААА-А19-119120490056-8) |
| 2 | Ministry of Science and Higher Education of the Russian Federation | FWGW-2021-0003 (121052600081-2)(0242-2021-0003) |
Abstract:
It is shown that the treatment of stoichiometric HfO2, which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads to a significant depletion of the film in oxygen and the formation of nonstoichiometric HfOx ( x<2 ). The longer the treatment time, the higher the degree of oxygen depletion. The charge transfer in the films under study occurs by phonon-assisted tunneling between oxygen vacancies serving as traps. It has been found that the p++ -Si/HfOx/Ni structures, where the oxide layer is treated in the electron cyclotron resonance hydrogen plasma, have memristor properties: they are reversibly switched between high and low resistance states. The fabricated memristor structures are forming-free.
Cite:
Perevalov T.V.
, Iskhakzai R.M.K.
, Prosvirin I.P.
, Aliev V.S.
, Gritsenko V.A.
Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2022. V.115. N2. P.79-83. DOI: 10.1134/s0021364022020084 WOS Scopus РИНЦ ANCAN OpenAlex
Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2022. V.115. N2. P.79-83. DOI: 10.1134/s0021364022020084 WOS Scopus РИНЦ ANCAN OpenAlex
Original:
Перевалов Т.В.
, Исхакзай Р.М.Х.
, Просвирин И.П.
, Алиев В.Ш.
, Гриценко В.А.
Бесформовочные мемристоры на основе оксида гафния, обработанного в водородной плазме электрон-циклотронного резонанса
Письма в Журнал экспериментальной и теоретической физики. 2022. Т.115. №1-2. С.89-93. DOI: 10.31857/s1234567822020045 РИНЦ OpenAlex
Бесформовочные мемристоры на основе оксида гафния, обработанного в водородной плазме электрон-циклотронного резонанса
Письма в Журнал экспериментальной и теоретической физики. 2022. Т.115. №1-2. С.89-93. DOI: 10.31857/s1234567822020045 РИНЦ OpenAlex
Dates:
| Submitted: | Nov 17, 2021 |
| Accepted: | Nov 25, 2021 |
| Published print: | Jan 1, 2022 |
| Published online: | Mar 31, 2022 |
Identifiers:
| Web of science: | WOS:000780909000004 |
| Scopus: | 2-s2.0-85127741197 |
| Elibrary: | 48427001 |
| Chemical Abstracts: | 2022:883226 |
| Chemical Abstracts (print): | 178:324119 |
| OpenAlex: | W4226238830 |