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Weak Antilocalization to Weak Localization Transition in Bi2Se3 Films on Graphene Научная публикация

Журнал Physica E: Low-Dimensional Systems and Nanostructures
ISSN: 1386-9477 , E-ISSN: 1873-1759
Вых. Данные Год: 2022, Том: 135, Номер статьи : 114969, Страниц : 5 DOI: 10.1016/j.physe.2021.114969
Ключевые слова Charge transport; Surface states; Topological insulator; Weak antilocalization
Авторы Stepina N.P. 1 , Golyashov V.A. 1 , Nenashev A.V. 1,2 , Tereshchenko O.E. 1 , Kokh K.A. 3,4 , Kirienko V.V. 1 , Koptev E.S. 1,5 , Goldyreva E.S. 4 , Rybin M.G. 6 , Obraztsova E.D. 6 , Antonova I.V. 1
Организации
1 Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia
2 Novosibirsk State University, Novosibirsk, 630090, Russia
3 Kemerovo State University, Kemerovo, 650000, Russia
4 Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk 630090, Russia
5 Novosibirsk State Technical University, Novosibirsk, 630073, Russia
6 Prokhorov General Physics Institute, RAS, Moscow, 119991, Russia

Реферат: Magneto-transport properties were studied on thin films of a 3D topological insulator (TI) BiSe grown on graphene (Gr) by physical vapor deposition. It was shown that the main contribution to the conductance is from the bulk states, whereas magnetoresistance is determined by both surface and bulk channels. The input of the charge transport over the surface states in the Si/SiO2/Gr/BiSe structure reveals itself in the weak antilocalization effect. The transition from a weak antilocalization to a weak localization is observed with decreasing the film thickness. The band bending on both interfaces makes it possible to explain the contribution to a weak antilocalization from different surfaces at different TI film thicknesses.
Библиографическая ссылка: Stepina N.P. , Golyashov V.A. , Nenashev A.V. , Tereshchenko O.E. , Kokh K.A. , Kirienko V.V. , Koptev E.S. , Goldyreva E.S. , Rybin M.G. , Obraztsova E.D. , Antonova I.V.
Weak Antilocalization to Weak Localization Transition in Bi2Se3 Films on Graphene
Physica E: Low-Dimensional Systems and Nanostructures. 2022. V.135. 114969 :1-5. DOI: 10.1016/j.physe.2021.114969 WOS Scopus РИНЦ CAPlusCA OpenAlex
Даты:
Поступила в редакцию: 26 апр. 2021 г.
Принята к публикации: 7 сент. 2021 г.
Опубликована online: 11 сент. 2021 г.
Опубликована в печати: 1 июл. 2022 г.
Идентификаторы БД:
Web of science: WOS:000704342800007
Scopus: 2-s2.0-85115180791
РИНЦ: 47067637
Chemical Abstracts: 2021:2076554
Chemical Abstracts (print): 176:450077
OpenAlex: W3199241647
Цитирование в БД:
БД Цитирований
Scopus 6
Web of science 6
OpenAlex 4
Альметрики: