Weak Antilocalization to Weak Localization Transition in Bi2Se3 Films on Graphene | Sciact - CRIS-system of Boreskov Institute of Catalysis

Weak Antilocalization to Weak Localization Transition in Bi2Se3 Films on Graphene Full article

Journal

Physica E: Low-Dimensional Systems and Nanostructures
ISSN: 1386-9477 , E-ISSN: 1873-1759

Output data

Year: 2022, Volume: 135, Article number : 114969, Pages count : 5 DOI: 10.1016/j.physe.2021.114969

Tags

Charge transport; Surface states; Topological insulator; Weak antilocalization

Authors

Stepina N.P. ¹ , Golyashov V.A. ¹ , Nenashev A.V. ^1,2 , Tereshchenko O.E. ¹ , Kokh K.A. ^3,4 , Kirienko V.V. ¹ , Koptev E.S. ^1,5 , Goldyreva E.S. ⁴ , Rybin M.G. ⁶ , Obraztsova E.D. ⁶ , Antonova I.V. ¹

Affiliations

1	Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia
2	Novosibirsk State University, Novosibirsk, 630090, Russia
3	Kemerovo State University, Kemerovo, 650000, Russia
4	Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk 630090, Russia
5	Novosibirsk State Technical University, Novosibirsk, 630073, Russia
6	Prokhorov General Physics Institute, RAS, Moscow, 119991, Russia

Magneto-transport properties were studied on thin films of a 3D topological insulator (TI) BiSe grown on graphene (Gr) by physical vapor deposition. It was shown that the main contribution to the conductance is from the bulk states, whereas magnetoresistance is determined by both surface and bulk channels. The input of the charge transport over the surface states in the Si/SiO2/Gr/BiSe structure reveals itself in the weak antilocalization effect. The transition from a weak antilocalization to a weak localization is observed with decreasing the film thickness. The band bending on both interfaces makes it possible to explain the contribution to a weak antilocalization from different surfaces at different TI film thicknesses.

Stepina N.P. , Golyashov V.A. , Nenashev A.V. , Tereshchenko O.E. , Kokh K.A. , Kirienko V.V. , Koptev E.S. , Goldyreva E.S. , Rybin M.G. , Obraztsova E.D. , Antonova I.V.
Weak Antilocalization to Weak Localization Transition in Bi2Se3 Films on Graphene
Physica E: Low-Dimensional Systems and Nanostructures. 2022. V.135. 114969 :1-5. DOI: 10.1016/j.physe.2021.114969 WOS Scopus РИНЦ ANCAN OpenAlex

Submitted:	Apr 26, 2021
Accepted:	Sep 7, 2021
Published online:	Sep 11, 2021
Published print:	Jul 1, 2022

Web of science:	WOS:000704342800007
Scopus:	2-s2.0-85115180791
Elibrary:	47067637
Chemical Abstracts:	2021:2076554
Chemical Abstracts (print):	176:450077
OpenAlex:	W3199241647

DB	Citing
Scopus	6
Web of science	6
OpenAlex	4