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Vapor Growth of Bi2Se3 and Bi2O2Se Crystals on Mica Научная публикация

Журнал Materials Research Bulletin
ISSN: 0025-5408
Вых. Данные Год: 2020, Том: 129, Номер статьи : 110906, Страниц : 6 DOI: 10.1016/j.materresbull.2020.110906
Ключевые слова Physical vapor deposition; Bismuth selenide; Epitaxy; Mica; Electrical properties; Microstructure
Авторы Kokh K.A. 1,2 , Nebogatikova N.A. 2,3 , Antonova I.V. 2,3,4 , Kustov D.A. 3 , Golyashov V.A. 3 , Goldyreva E.S. 1,2 , Stepina N.P. 3 , Kirienko V.V. 3 , Tereshchenko O.E. 3
Организации
1 Sobolev Institute of geology and mineralogy SB RAS, Novosibirsk, 630090, Russia
2 Novosibirsk State University, Novosibirsk, 630090, Russia
3 Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia
4 Novosibirsk State Technical University, Novosibirsk, 630087, Russia

Реферат: Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 102-104 Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.
Библиографическая ссылка: Kokh K.A. , Nebogatikova N.A. , Antonova I.V. , Kustov D.A. , Golyashov V.A. , Goldyreva E.S. , Stepina N.P. , Kirienko V.V. , Tereshchenko O.E.
Vapor Growth of Bi2Se3 and Bi2O2Se Crystals on Mica
Materials Research Bulletin. 2020. V.129. 110906 :1-6. DOI: 10.1016/j.materresbull.2020.110906 WOS Scopus CAPlusCA OpenAlex
Даты:
Поступила в редакцию: 1 окт. 2019 г.
Принята к публикации: 20 апр. 2020 г.
Опубликована online: 25 мая 2020 г.
Опубликована в печати: 1 сент. 2020 г.
Идентификаторы БД:
Web of science: WOS:000536182700029
Scopus: 2-s2.0-85083812184
Chemical Abstracts: 2020:860051
Chemical Abstracts (print): 173:787600
OpenAlex: W3018636552
Цитирование в БД:
БД Цитирований
Scopus 4
OpenAlex 6
Web of science 4
Альметрики: