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Vapor Growth of Bi2Se3 and Bi2O2Se Crystals on Mica Full article

Journal Materials Research Bulletin
ISSN: 0025-5408
Output data Year: 2020, Volume: 129, Article number : 110906, Pages count : 6 DOI: 10.1016/j.materresbull.2020.110906
Tags Physical vapor deposition; Bismuth selenide; Epitaxy; Mica; Electrical properties; Microstructure
Authors Kokh K.A. 1,2 , Nebogatikova N.A. 2,3 , Antonova I.V. 2,3,4 , Kustov D.A. 3 , Golyashov V.A. 3 , Goldyreva E.S. 1,2 , Stepina N.P. 3 , Kirienko V.V. 3 , Tereshchenko O.E. 3
Affiliations
1 Sobolev Institute of geology and mineralogy SB RAS, Novosibirsk, 630090, Russia
2 Novosibirsk State University, Novosibirsk, 630090, Russia
3 Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia
4 Novosibirsk State Technical University, Novosibirsk, 630087, Russia

Abstract: Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 102-104 Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.
Cite: Kokh K.A. , Nebogatikova N.A. , Antonova I.V. , Kustov D.A. , Golyashov V.A. , Goldyreva E.S. , Stepina N.P. , Kirienko V.V. , Tereshchenko O.E.
Vapor Growth of Bi2Se3 and Bi2O2Se Crystals on Mica
Materials Research Bulletin. 2020. V.129. 110906 :1-6. DOI: 10.1016/j.materresbull.2020.110906 WOS Scopus ANCAN OpenAlex
Dates:
Submitted: Oct 1, 2019
Accepted: Apr 20, 2020
Published online: May 25, 2020
Published print: Sep 1, 2020
Identifiers:
Web of science: WOS:000536182700029
Scopus: 2-s2.0-85083812184
Chemical Abstracts: 2020:860051
Chemical Abstracts (print): 173:787600
OpenAlex: W3018636552
Citing:
DB Citing
Scopus 4
OpenAlex 6
Web of science 4
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