SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors | Sciact - CRIS-система Института катализа

SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors Научная публикация

Журнал

Journal of Structural Chemistry
ISSN: 0022-4766 , E-ISSN: 1573-8779

Вых. Данные

Год: 2024, Том: 65, Номер: 10, Страницы: 2041-2057 Страниц : 17 DOI: 10.1134/S0022476624100147

Ключевые слова

SiCx:H and SiCxNy:H amorphous films; ICP CVD; hexamethyldisilane; film stability; optical properties; optical emission spectroscopy

Авторы

Chagin M.N. ¹ , Ermakova E.N. ¹ , Shayapov V.R. ¹ , Sulyaeva V.S. ¹ , Yushina I.V. ¹ , Maksimovskiy E.A. ¹ , Dudkina S.P. ¹ , Saraev A.A. ² , Gerasimov E.Y. ² , Mogilnikov K.P. ³ , Kolodin A.N. ¹ , Kosinova M.L. ¹

Организации

1	Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2	Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3	Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

Информация о финансировании (1)

Российский научный фонд

23-79-00026 (123041400012-0)

Amorphous transparent SiCx:H and SiCxNy:H films are prepared at a temperature of 200 °C and a discharge power of 200 W in an inductively coupled RF plasma reactor using hexamethyldisilane vapors and additional argon and/or nitrogen gases. The influence of N2 flow rate on the morphology, chemical structure, elemental composition, transmittance, refractive index, contact angle, and film deposition rate is studied. Plasma components are determined by optical emission spectroscopy. It is shown by HRTEM and EDS mapping methods that the annealed Cu/SiCx:H/Si(100) sample has distinct substrate/film and film/copper layer interfaces, no Cu diffusion occurs, and that the SiCx:H the film can be considered as a promising diffusion barrier layer. Stability of the films during storage under ambient conditions is studied. The tendency of SiCxNy:H films to oxidize is revealed by EDS, IR spectroscopy, and XPS.

Chagin M.N. , Ermakova E.N. , Shayapov V.R. , Sulyaeva V.S. , Yushina I.V. , Maksimovskiy E.A. , Dudkina S.P. , Saraev A.A. , Gerasimov E.Y. , Mogilnikov K.P. , Kolodin A.N. , Kosinova M.L.
SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors
Journal of Structural Chemistry. 2024. V.65. N10. P.2041-2057. DOI: 10.1134/S0022476624100147 WOS

Чагин М.Н. , Ермакова Е.Н. , Шаяпов В.Р. , Суляева В.С. , Юшина И.В. , Максимовский Е.А. , Дудкина С.П. , Сараев А.А. , Герасимов Е.Ю. , Могильников К.П. , Колодин А.Н. , Косинова М.Л.
Аморфные пленки SiCx:H и SiCxNy:H, полученные из паров гексаметилдисилана
Журнал структурной химии. 2024. Т.65. №10. 134149 . DOI: 10.26902/JSC_id134149 РИНЦ OpenAlex

Поступила в редакцию:	14 мая 2024 г.
Принята к публикации:	14 июн. 2024 г.
Опубликована в печати:	1 окт. 2024 г.
Опубликована online:	11 нояб. 2024 г.

Web of science:

WOS:001352837600011

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