Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese ‐ Based Bismuth Telluride Topological Insulator Thin Films | Sciact - CRIS-система Института катализа

Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese ‐ Based Bismuth Telluride Topological Insulator Thin Films Научная публикация

Журнал

Journal of Raman Spectroscopy
ISSN: 0377-0486 , E-ISSN: 1097-4555

Вых. Данные

Год: 2025, Том: 56, Номер: 5, Страницы: 409-419 Страниц : 11 DOI: 10.1002/jrs.6779

Ключевые слова

magnetic topological insulators | molecular beam epitaxy | polarization-resolved resonant Raman spectroscopy | vibrational modes

Авторы

Kumar N. ^1,2 , Ishchenko Denis V. ¹ , Milekhin Ilya A. ^1,3 , Kyrova Ekaterina D. ^1,4 , Fedosenko Evgeny V. ¹ , Milekhin Alexander G. ^1,3 , Tereshchenko Oleg E. ^1,5,6

Организации

1	Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
2	Tomsk State University, Tomsk, Russia
3	Novosibirsk State University, Novosibirsk, Russia
4	Novosibirsk State Technical University, Novosibirsk, Russia
5	Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Koltsovo, Russia
6	Department of Physics, Saint Petersburg State University, St. Petersburg, Russia

Информация о финансировании (3)

1	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	FSUS-2024-0020
2	Министерство науки и высшего образования Российской Федерации (с 15 мая 2018)	FWUR-2024-0042
3	Российский научный фонд	23-12-00016 (123060600015-0)

Chemical composition dependent vibrational modes of manganese-based bismuth telluride (MBT) magnetic topological insulators thin films grown by molecular beam epitaxy were studied by Raman spectroscopy and compared with the vibrational modes of Bi2Te3 films. Intensity of E3g TO mode was much stronger in Bi efficient MBT film. In contrast, vibrational cross-section of A21g LO mode was stronger in Bi deficient MBT compound. E3g TO mode corresponds to in-plane vibrations of Bi-Te atomic layers. Deficiency of Bi atoms in the MBT indicated that the vibrational degree of freedom of Bi-Te in the septuple unit cell was less probable. Antisymmetric out-of-phase vibration of Te-Te atoms resulted in A21g LO mode in which Bi atom was stationary, therefore vibrational cross-section of this mode for Bi deficient MBT film was stronger. A resonantly excited Eg and A1g modes was observed at excitation energy 1.57 eV associated to deformation potential and Frohlich electron–phonon coupling, respectively

Kumar N. , Ishchenko D. , Milekhin I. , Kyrova E. , Fedosenko E. , Milekhin A. , Tereshchenko O.
Chemical Composition Dependent Raman Scattering Spectroscopy of MBE Grown Manganese ‐ Based Bismuth Telluride Topological Insulator Thin Films
Journal of Raman Spectroscopy. 2025. V.56. N5. P.409-419. DOI: 10.1002/jrs.6779 WOS Scopus OpenAlex СКИФ ID

Поступила в редакцию:	18 нояб. 2024 г.
Принята к публикации:	24 янв. 2025 г.
Опубликована в печати:	1 мая 2025 г.

Web of science:	WOS:001420181000001
Scopus:	2-s2.0-105002488804
OpenAlex:	W4407499247
СКИФ ID:	3698

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