Amorphous Dielectric SiCNH Films Prepared by PECVD Method from Hexamethyldisilazane Vapors | Sciact - CRIS-system of Boreskov Institute of Catalysis

Amorphous Dielectric SiCNH Films Prepared by PECVD Method from Hexamethyldisilazane Vapors Full article

Journal

Journal of Structural Chemistry
ISSN: 0022-4766 , E-ISSN: 1573-8779

Output data

Year: 2025, Volume: 66, Number: 11, Pages: 2292–2308 Pages count : 17 DOI: 10.1134/S0022476625110046

Tags

amorphous SiCNH films, PECVD, hexamethyldisilazane, dielectric properties, Cu diffusion barrier, XPS, optical emission spectroscopy

Authors

Ermakova E.N. ¹ , Plekhanov A.G. ¹ , Shayapov V.R. ¹ , Sulyaeva V.S. ¹ , Maksimovsky E.A. ¹ , Petukhova D.E. ¹ , Saraev A.A. ² , Gerasimov E.Y. ² , Kirienko V.V. ³ , Khomyakov M.N. ⁴ , Kosinova M.L. ¹

Affiliations

1	Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2	Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3	Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
4	Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

Funding (1)

Russian Science Foundation

23-79-00026 (123041400012-0)

Thin amorphous films of hydrogenated silicon carbonitride are prepared in a high-frequency plasma reactor using hexamethyldisilazane vapor and helium. SiCxNy:H films of various compositions are deposited by varying the substrate temperature and the precursor pressure in the reactor chamber. The dependences of growth rate, elemental composition, chemical structure, refractive index, and dielectric constant of the films on synthesis conditions are determined. Gas species are studied by optical emission spectroscopy. It is shown by HRTEM and EDS mapping methods that the annealed Cu/SiCNH/Si(100) sample has distinct substrate/SiCNH and SiCNH/copper interfaces; the copper diffusion was not registered. Thin SiCNH films with a low k value can be considered as a promising diffusion barrier layer for modern microcircuits.

Ermakova E.N. , Plekhanov A.G. , Shayapov V.R. , Sulyaeva V.S. , Maksimovsky E.A. , Petukhova D.E. , Saraev A.A. , Gerasimov E.Y. , Kirienko V.V. , Khomyakov M.N. , Kosinova M.L.
Amorphous Dielectric SiCNH Films Prepared by PECVD Method from Hexamethyldisilazane Vapors
Journal of Structural Chemistry. 2025. V.66. N11. P.2292–2308. DOI: 10.1134/S0022476625110046

Ермакова Е.Н. , Плеханов А.Г. , Шаяпов В.Р. , Суляева В.С. , Максимовский Е.А. , Петухова Д.Е. , Сараев А.А. , Герасимов Е.Ю. , Кириенко В.В. , Хомяков М.Н. , Косинова М.Л.
Аморфные диэлектрические пленки SiCNH, полученные методом PECVD из паров гексаметилдисилазана
Журнал структурной химии. 2025. Т.66. №11. 155150 :1-17. DOI: 10.26902/JSC_id155150 РИНЦ

Submitted:	Aug 26, 2025
Accepted:	Sep 4, 2025
Published print:	Nov 1, 2025
Published online:	Dec 5, 2025

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