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A Study of the Structure of (HfO2 ) x (Al2 O3)1−x /Si Films by X-Ray Photoelectron Spectroscopy Full article

Journal Journal of Structural Chemistry
ISSN: 0022-4766 , E-ISSN: 1573-8779
Output data Year: 2011, Volume: 52, Number: 3, Pages: 480-487 Pages count : 8 DOI: 10.1134/S002247661103005X
Tags Alumina, Binary solution, Hafnium aluminate, Hafnium dioxide, Layer-by-layer analysis, X-ray photoelectron spectroscopy
Authors Kaichev V.V. 1 , Dubinin Yu.V. 1 , Smirnova T.P. 2 , Lebedev M.S. 2
Affiliations
1 G. K. Boreskov Institute of Catalysis, Siberian Division, Russian Academy of Sciences, Novosibirsk
2 A. V. Nikolaev Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, Novosibirsk

Funding (1)

1 Siberian Branch of the Russian Academy of Sciences 70

Abstract: By X-ray photoelectron spectroscopy (XPS), using the technique of layer-by-layer analysis, the films of (HfO2) x (Al2O3)1−x solid solutions synthesized by chemical vapor deposition are studied. The possibility to determine the structure of solid binary solutions based on the analysis of the XPS spectra is demonstrated.
Cite: Kaichev V.V. , Dubinin Y.V. , Smirnova T.P. , Lebedev M.S.
A Study of the Structure of (HfO2 ) x (Al2 O3)1−x /Si Films by X-Ray Photoelectron Spectroscopy
Journal of Structural Chemistry. 2011. V.52. N3. P.480-487. DOI: 10.1134/S002247661103005X WOS Scopus РИНЦ ANCAN OpenAlex
Original: Каичев В.В. , Дубинин Ю.В. , Смирнова Т.П. , Лебедев М.С.
Изучение структуры пленок (HfO2)x(Al2O3)1–x/Si методом рентгеновской фотоэлектронной спектроскопии
Журнал структурной химии. 2011. Т.52. №3. С.495-502. RSCI РИНЦ
Dates:
Submitted: Mar 5, 2010
Published print: Jun 1, 2011
Published online: Jul 29, 2011
Identifiers:
Web of science: WOS:000294860200005
Scopus: 2-s2.0-80054764488
Elibrary: 18009920
Chemical Abstracts: 2011:947680
Chemical Abstracts (print): 155:601881
OpenAlex: W2040937254
Citing:
DB Citing
Web of science 11
Scopus 11
Elibrary 12
OpenAlex 11
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