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InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge Научная публикация

Журнал Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118
Вых. Данные Год: 2015, Том: 107, Номер: 17, Номер статьи : 173501, Страниц : 5 DOI: 10.1063/1.4934745
Ключевые слова Capacitance; Dielectric devices; Electric discharges; Film growth; Gas discharge tubes; Interface states; Interfaces (materials); Metallic compounds; Metals; MOS capacitors; MOS devices; Plasma theory; Transistors
Авторы Aksenov M.S. 1,2 , Kokhanovskii A.Yu. 2 , Polovodov P.A. 2 , Devyatova S.F. 1 , Golyashov V.A. 1,2 , Kozhukhov A.S. 1,2 , Prosvirin I.P. 2,3 , Khandarkhaeva S.E. 2 , Gutakovskii A.K. 1,2 , Valisheva N.A. 1 , Tereshсhenko O.E. 1,2
Организации
1 Rzhanov Institute of Semiconductor Physics, SB RAS, 13, Lavrentiev Ave., Novosibirsk 630090, Russian Federation
2 Novosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, Russian Federation
3 Boreskov Institute of Catalysis, SB RAS, 5, Lavrentiev Ave., Novosibirsk 630090, Russian Federation

Информация о финансировании (1)

1 Министерство образования и науки Российской Федерации 14.621.21.0004 (RFMEFI62114X0004)

Реферат: We developed and applied a method of InAs passivation in the low-energy plasma of Townsend discharge. The controlled interface oxidation in the Ar:O2:CF4 gas mixture under visualization of gas discharge plasma allowed growing thin homogeneous films in the range of 5–15 nm thickness. Oxidation with the addition of CF4 in gas-discharge plasma led to the formation of In and As oxyfluorides with a wide insulating gap and isostructural interface with unpinned Fermi level behavior. The metal-oxide-semiconductor structure showed excellent capacitance-voltage characteristics: small frequency dispersion (<15 mV), density of interface states (Dit ) in the gap below 5 × 1010 eV–1cm−2, and fixed charge (Qfix ) below 5 × 1011 cm−2.
Библиографическая ссылка: Aksenov M.S. , Kokhanovskii A.Y. , Polovodov P.A. , Devyatova S.F. , Golyashov V.A. , Kozhukhov A.S. , Prosvirin I.P. , Khandarkhaeva S.E. , Gutakovskii A.K. , Valisheva N.A. , Tereshсhenko O.E.
InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge
Applied Physics Letters. 2015. V.107. N17. 173501 :1-5. DOI: 10.1063/1.4934745 WOS Scopus РИНЦ CAPlusCA OpenAlex
Даты:
Поступила в редакцию: 27 мая 2015 г.
Принята к публикации: 16 окт. 2015 г.
Опубликована в печати: 26 окт. 2015 г.
Опубликована online: 26 окт. 2015 г.
Идентификаторы БД:
Web of science: WOS:000364234200047
Scopus: 2-s2.0-84945979306
РИНЦ: 24968105
Chemical Abstracts: 2015:1744297
Chemical Abstracts (print): 163:659277
OpenAlex: W1832734220
Цитирование в БД:
БД Цитирований
Web of science 13
Scopus 14
РИНЦ 33
OpenAlex 19
Альметрики: