InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge | Sciact - CRIS-system of Boreskov Institute of Catalysis

InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge Full article

Journal

Applied Physics Letters
ISSN: 0003-6951 , E-ISSN: 1077-3118

Output data

Year: 2015, Volume: 107, Number: 17, Article number : 173501, Pages count : 5 DOI: 10.1063/1.4934745

Tags

Capacitance; Dielectric devices; Electric discharges; Film growth; Gas discharge tubes; Interface states; Interfaces (materials); Metallic compounds; Metals; MOS capacitors; MOS devices; Plasma theory; Transistors

Authors

Aksenov M.S. ^1,2 , Kokhanovskii A.Yu. ² , Polovodov P.A. ² , Devyatova S.F. ¹ , Golyashov V.A. ^1,2 , Kozhukhov A.S. ^1,2 , Prosvirin I.P. ^2,3 , Khandarkhaeva S.E. ² , Gutakovskii A.K. ^1,2 , Valisheva N.A. ¹ , Tereshсhenko O.E. ^1,2

Affiliations

1	Rzhanov Institute of Semiconductor Physics, SB RAS, 13, Lavrentiev Ave., Novosibirsk 630090, Russian Federation
2	Novosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, Russian Federation
3	Boreskov Institute of Catalysis, SB RAS, 5, Lavrentiev Ave., Novosibirsk 630090, Russian Federation

Funding (1)

The Ministry of Education and Science of the Russian Federation

14.621.21.0004 (RFMEFI62114X0004)

We developed and applied a method of InAs passivation in the low-energy plasma of Townsend discharge. The controlled interface oxidation in the Ar:O2:CF4 gas mixture under visualization of gas discharge plasma allowed growing thin homogeneous films in the range of 5–15 nm thickness. Oxidation with the addition of CF4 in gas-discharge plasma led to the formation of In and As oxyfluorides with a wide insulating gap and isostructural interface with unpinned Fermi level behavior. The metal-oxide-semiconductor structure showed excellent capacitance-voltage characteristics: small frequency dispersion (<15 mV), density of interface states (Dit ) in the gap below 5 × 1010 eV–1cm−2, and fixed charge (Qfix ) below 5 × 1011 cm−2.

Aksenov M.S. , Kokhanovskii A.Y. , Polovodov P.A. , Devyatova S.F. , Golyashov V.A. , Kozhukhov A.S. , Prosvirin I.P. , Khandarkhaeva S.E. , Gutakovskii A.K. , Valisheva N.A. , Tereshсhenko O.E.
InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge
Applied Physics Letters. 2015. V.107. N17. 173501 :1-5. DOI: 10.1063/1.4934745 WOS Scopus РИНЦ ANCAN OpenAlex

Submitted:	May 27, 2015
Accepted:	Oct 16, 2015
Published print:	Oct 26, 2015
Published online:	Oct 26, 2015

Web of science:	WOS:000364234200047
Scopus:	2-s2.0-84945979306
Elibrary:	24968105
Chemical Abstracts:	2015:1744297
Chemical Abstracts (print):	163:659277
OpenAlex:	W1832734220

DB	Citing
Web of science	13
Scopus	14
Elibrary	33
OpenAlex	19