Stability of the (0001) Surface of the Bi2Se3 Topological Insulator | Sciact - CRIS-система Института катализа

Stability of the (0001) Surface of the Bi2Se3 Topological Insulator Научная публикация

Журнал

Journal of Experimental and Theoretical Physics Letters (JETP Letters)
ISSN: 0021-3640 , E-ISSN: 1090-6487

Вых. Данные

Год: 2011, Том: 94, Номер: 6, Страницы: 465-468 Страниц : 4 DOI: 10.1134/S0021364011180159

Ключевые слова

JETP Letter; Topological Insulator; Tunneling Conductance; Dirac Cone; Scanning Tunneling Spectroscopy

Авторы

Tereshchenko O.E. ^1,2 , Kokh K.A. ³ , Atuchin V.V. ¹ , Romanyuk K.N. ^1,2 , Makarenko S.V. ² , Golyashov V.A. ² , Kozhukhov A.S. ^1,2 , Prosvirin I.P. ⁴ , Shklyaev A.A. ^1,2

Организации

1	Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
2	Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia
3	Joint Institute of Geology, Geophysics, and Mineralogy, Siberian Branch, Russian Academy of Sciences, Universitetskii pr. 3, Novosibirsk, 630090 Russia
4	Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 5, Novosibirsk, 630090 Russia

The inertness of the cleaved (0001) surface of a Bi2Se3 single crystal to oxidation has been demonstrated using X-ray photoelectron spectroscopy, as well as atomicforce and scanning tunneling microscopy and spectros copy. No intrinsic bismuth and selenium oxides are formed on the surface after a month of storage in air. Atomically flat surfaces with macroscopic sizes (~1 cm2) and rms roughness less than 0.1 nm have been prepared, and (1 × 1)(0001) Bi2Se3 atomic structure has been resolved. The tunneling conductance measurements have shown that the energy dependence of the surface density of states is quasilinear in the band gap of Bi2Se3.

Tereshchenko O.E. , Kokh K.A. , Atuchin V.V. , Romanyuk K.N. , Makarenko S.V. , Golyashov V.A. , Kozhukhov A.S. , Prosvirin I.P. , Shklyaev A.A.
Stability of the (0001) Surface of the Bi2Se3 Topological Insulator
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2011. V.94. N6. P.465-468. DOI: 10.1134/S0021364011180159 WOS Scopus РИНЦ CAPlusCA OpenAlex

Терещенко О.Е. , Кох К.А. , Атучин В.В. , Романюк К.Н. , Макаренко С.В. , Голяшов В.А. , Кожухов А.С. , Просвирин И.П. , Шкляев А.А.
Стабильность поверхности (0001) топологического изолятора Bi2Se3
Письма в Журнал экспериментальной и теоретической физики. 2011. Т.94. №6. С.500-503. РИНЦ

Поступила в редакцию:	9 авг. 2011 г.
Опубликована в печати:	1 нояб. 2011 г.
Опубликована online:	26 нояб. 2011 г.

Web of science:	WOS:000297545600012
Scopus:	2-s2.0-82055206913
РИНЦ:	18015575
Chemical Abstracts:	2011:1527784
Chemical Abstracts (print):	156:652418
OpenAlex:	W2019203009

БД	Цитирований
Web of science	20
Scopus	22
РИНЦ	23
OpenAlex	23