Electronic Structure of Oxygen Vacancies in Hafnium Oxide | Sciact - CRIS-система Института катализа

Electronic Structure of Oxygen Vacancies in Hafnium Oxide Научная публикация

Конференция

Insulating Films on Semiconductors 2013
25-28 июн. 2013 , Cracow

Журнал

Microelectronic Engineering
ISSN: 0167-9317 , E-ISSN: 1873-5568

Вых. Данные

Год: 2013, Том: 109, Страницы: 21-23 Страниц : 3 DOI: 10.1016/j.mee.2013.03.005

Ключевые слова

Absorption spectra, Defect states, Density functional theory, Hafnium dioxide, Oxygen vacancy, Photoelectron spectroscopy

Авторы

Perevalov T.V. ¹ , Aliev V.Sh. ¹ , Gritsenko V.A. ¹ , Saraev A.A. ² , Kaichev V.V. ²

Организации

1	A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia
2	Boreskov Institute of Catalysis of SB RAS, 5 Lavrentiev Ave., 630090 Novosibirsk, Russia

Информация о финансировании (3)

1	Российский фонд фундаментальных исследований	12-08-31084
2	Сибирское отделение Российской академии наук	1-13
3	Сибирское отделение Российской академии наук	24-18

The electronic structure of oxygen vacancies and polyvacancies in HfO2 was studied theoretically from the first-principles calculations and experimentally, by X-ray photoelectron spectroscopy. The electronic structure calculations of crystalline HfO2 were performed within the hybrid density functional theory. The experimental photoelectron spectra indicate that both nonstoichiometric chemistry and Ar-ion bombardment of hafnia films lead to the generation of the defect states at 3.0 eV above the valence band. According to the calculations, these defect states are attributed to the oxygen vacancies.

Perevalov T.V. , Aliev V.S. , Gritsenko V.A. , Saraev A.A. , Kaichev V.V.
Electronic Structure of Oxygen Vacancies in Hafnium Oxide
Microelectronic Engineering. 2013. V.109. P.21-23. DOI: 10.1016/j.mee.2013.03.005 WOS Scopus РИНЦ CAPlusCA OpenAlex

Опубликована online:	13 мар. 2013 г.
Опубликована в печати:	1 сент. 2013 г.

Web of science:	WOS:000321229200007
Scopus:	2-s2.0-84876557433
РИНЦ:	20437544
Chemical Abstracts:	2013:854162
Chemical Abstracts (print):	159:477386
OpenAlex:	W1966376754

БД	Цитирований
Web of science	53
Scopus	59
РИНЦ	59
OpenAlex	61