Electronic Structure of Oxygen Vacancies in Hafnium Oxide Full article
Conference |
Insulating Films on Semiconductors 2013 25-28 Jun 2013 , Cracow |
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Journal |
Microelectronic Engineering
ISSN: 0167-9317 , E-ISSN: 1873-5568 |
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Output data | Year: 2013, Volume: 109, Pages: 21-23 Pages count : 3 DOI: 10.1016/j.mee.2013.03.005 | ||||
Tags | Absorption spectra, Defect states, Density functional theory, Hafnium dioxide, Oxygen vacancy, Photoelectron spectroscopy | ||||
Authors |
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Affiliations |
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Funding (3)
1 | Russian Foundation for Basic Research | 12-08-31084 |
2 | Siberian Branch of the Russian Academy of Sciences | 1-13 |
3 | Siberian Branch of the Russian Academy of Sciences | 24-18 |
Abstract:
The electronic structure of oxygen vacancies and polyvacancies in HfO2 was studied theoretically from the first-principles calculations and experimentally, by X-ray photoelectron spectroscopy. The electronic structure calculations of crystalline HfO2 were performed within the hybrid density functional theory. The experimental photoelectron spectra indicate that both nonstoichiometric chemistry and Ar-ion bombardment of hafnia films lead to the generation of the defect states at 3.0 eV above the valence band. According to the calculations, these defect states are attributed to the oxygen vacancies.
Cite:
Perevalov T.V.
, Aliev V.S.
, Gritsenko V.A.
, Saraev A.A.
, Kaichev V.V.
Electronic Structure of Oxygen Vacancies in Hafnium Oxide
Microelectronic Engineering. 2013. V.109. P.21-23. DOI: 10.1016/j.mee.2013.03.005 WOS Scopus РИНЦ ANCAN OpenAlex
Electronic Structure of Oxygen Vacancies in Hafnium Oxide
Microelectronic Engineering. 2013. V.109. P.21-23. DOI: 10.1016/j.mee.2013.03.005 WOS Scopus РИНЦ ANCAN OpenAlex
Dates:
Published online: | Mar 13, 2013 |
Published print: | Sep 1, 2013 |
Identifiers:
Web of science: | WOS:000321229200007 |
Scopus: | 2-s2.0-84876557433 |
Elibrary: | 20437544 |
Chemical Abstracts: | 2013:854162 |
Chemical Abstracts (print): | 159:477386 |
OpenAlex: | W1966376754 |