Preparation and Properties of Thin HfO2 Films | Sciact - CRIS-система Института катализа

Preparation and Properties of Thin HfO2 Films Научная публикация

Журнал

Inorganic Materials
ISSN: 0020-1685 , E-ISSN: 1608-3172

Вых. Данные

Год: 2005, Том: 41, Номер: 12, Страницы: 1300-1304 Страниц : 5 DOI: 10.1007/s10789-005-0305-8

Ключевые слова

CHEMICAL-VAPOR-DEPOSITION; ATOMIC-LAYER DEPOSITION; HAFNIUM OXIDE; Si; TEMPERATURE; INTERFACE; PRECURSOR; STABILITY; Si(100); OXYGEN

Авторы

Yakovkina L.V. ¹ , Kichai V.N. ¹ , Smirnova T.P. ¹ , Kaichev V.V. ² , Shubin Y.V. ¹ , Morozova N.B. ¹ , Zherikova K.V. ¹ , Igumenov I.K. ¹

Организации

1	Nikolaev Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090 Russia
2	Boreskov Institute of Catalysis, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 5, Novosibirsk, 630090 Russia

HfO2 layers were grown on silicon by metalorganic chemical vapor deposition using (C5H5)2Hf(CH3)2, (C5H5)2Hf(N(C2H5)2)2, and Hf(dpm)4 as volatile precursors and were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, and IR spectroscopy. The films were shown to consist of monoclinic HfO2 and to contain hafnium silicide and silicate at the HfO2/Si interface. The presence of hafnium silicide was attributed to oxygen deficiency produced by argon ion milling. Hafnium silicate was formed as a result of the reaction between hafnium and silicon oxides during annealing. Current-voltage and capacitance-voltage measurements on Al/HfO2/Si test structures were used to determine the dielectric permittivity and electrical resistivity of the films: ɛ = 15–20, ρ ∼ 1015 cm.

Yakovkina L.V. , Kichai V.N. , Smirnova T.P. , Kaichev V.V. , Shubin Y.V. , Morozova N.B. , Zherikova K.V. , Igumenov I.K.
Preparation and Properties of Thin HfO2 Films
Inorganic Materials. 2005. V.41. N12. P.1300-1304. DOI: 10.1007/s10789-005-0305-8 WOS Scopus РИНЦ CAPlusCA OpenAlex

Яковкина Л.В. , Кичай В.Н. , Смирнова Т.П. , Каичев В.В. , Шубин Ю.В. , Морозова Н.Б. , Жерикова К.В. , Игуменов И.К.
Получение и свойства тонких пленок HfO2
Неорганические материалы. 2005. Т.41. №12. С.1474-1479. RSCI РИНЦ

Поступила в редакцию:	23 мар. 2005 г.
Опубликована в печати:	1 дек. 2005 г.

Web of science:	WOS:000234154800011
Scopus:	2-s2.0-29144490594
РИНЦ:	13477320
Chemical Abstracts:	2005:1321974
Chemical Abstracts (print):	145:93995
OpenAlex:	W2323650135

БД	Цитирований
Web of science	15
Scopus	18
РИНЦ	19
OpenAlex	22