Optical Properties of the HfO2 – xNx and TiO2 – xNx Films Prepared by Ion Beam Sputtering
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Translated
|
| Journal |
Optics and Spectroscopy
ISSN: 0030-400X
, E-ISSN: 1562-6911
|
| Output data |
Year: 2009,
Volume: 106,
Number: 1,
Pages: 72-77
Pages count
: 6
DOI:
10.1134/S0030400X09010093
|
| Authors |
Atuchin V.V.
1
,
Kruchinin V.N.
1
,
Kalinkin A.V.
2
,
Aliev V.Sh.
1
,
Rykhlitskii S.V.
1
,
Shvets V.A.
1
,
Spesivtsev E.V.
1
|
| Affiliations |
| 1 |
Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
|
| 2 |
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
|
|
Optical characteristics of the HfO2 − x N x and TiO2 − x N x films obtained by reactive ion beam sputtering have been investigated by spectral ellipsometry. The chemical composition of the films was determined using X-ray photoelectron spectroscopy. The nitrogen content in the oxynitride films (determined by the N2/O2 ratio in the gas mixture during synthesis) reached ≈9 at % for TiO2 − x N x and ≈ 6 at % for HfO2 − x N x . It is found that the dispersion relations n(λ) and k(λ) for the TiO2 − x N x films change from those characteristic of titanium dioxide to those typical of titanium nitride with an increase in the nitrogen content from 0 to ≈9 at %. The optical parameters of the HfO2 − x N x films depend weakly on the nitrogen content in the range 0–6 at %.