Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM
Full article
| Общее |
Language:
Английский,
Genre:
Full article,
Status:
Published,
Source type:
Original
|
| Conference |
19th Conference on “Insulating Films on Semiconductors”
29 Jun - 2 Jul 2015
,
Udine
|
| Journal |
Microelectronic Engineering
ISSN: 0167-9317
, E-ISSN: 1873-5568
|
| Output data |
Year: 2015,
Volume: 147,
Pages: 165-167
Pages count
: 3
DOI:
10.1016/j.mee.2015.04.091
|
| Tags |
Hafnium sub-oxides, Nanoscale fluctuations, Percolation, Resistive memory |
| Authors |
Kruchinin V.N.
1
,
Aliev V.Sh.
1
,
Perevalov T.V.
1,2
,
Islamov D.R.
1,2
,
Gritsenko V.A.
1,2
,
Prosvirin I.P.
3
,
Cheng C.H.
4
,
Chin A.
5
|
| Affiliations |
| 1 |
Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia
|
| 2 |
Novosibirsk State University, 2 Pirogov Str., 630090 Novosibirsk, Russia
|
| 3 |
Boreskov Institute of Catalysis SB RAS, 5 Lavrentiev Ave., 630090 Novosibi
|
| 4 |
Dept. of Mechatronic Engineering, National Taiwan Normal University, 106 Taipei, Taiwan, ROC
|
| 5 |
National Chiao Tung University, 300 Hsinchu, Taiwan, ROC
|
|
Funding (3)
|
1
|
Russian Science Foundation
|
14-19-00192
|
|
2
|
The Ministry of Education and Science of the Russian Federation
|
|
|
3
|
Ministry of Science and Technology
|
NSC103-2923-E-009-002-MY3
|
We study the structure of non-stoichiometric HfO x films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry.•HfOx,to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (~10-15%) of HfOy (y<2).•Spatial potential fluctuations of chemical composition lead to fluctuations of the band gap in HfOx .•Transport in HfO x is described by Efros-Shklovskii percolation theory.•We propose that HfOx -based RRAM in low resistance state has the same structure.