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Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM Full article

Общее Language: Английский, Genre: Full article,
Status: Published, Source type: Original
Conference 19th Conference on “Insulating Films on Semiconductors”
29 Jun - 2 Jul 2015 , Udine
Journal Microelectronic Engineering
ISSN: 0167-9317 , E-ISSN: 1873-5568
Output data Year: 2015, Volume: 147, Pages: 165-167 Pages count : 3 DOI: 10.1016/j.mee.2015.04.091
Tags Hafnium sub-oxides, Nanoscale fluctuations, Percolation, Resistive memory
Authors Kruchinin V.N. 1 , Aliev V.Sh. 1 , Perevalov T.V. 1,2 , Islamov D.R. 1,2 , Gritsenko V.A. 1,2 , Prosvirin I.P. 3 , Cheng C.H. 4 , Chin A. 5
Affiliations
1 Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia
2 Novosibirsk State University, 2 Pirogov Str., 630090 Novosibirsk, Russia
3 Boreskov Institute of Catalysis SB RAS, 5 Lavrentiev Ave., 630090 Novosibi
4 Dept. of Mechatronic Engineering, National Taiwan Normal University, 106 Taipei, Taiwan, ROC
5 National Chiao Tung University, 300 Hsinchu, Taiwan, ROC

Funding (3)

1 Russian Science Foundation 14-19-00192
2 The Ministry of Education and Science of the Russian Federation
3 Ministry of Science and Technology NSC103-2923-E-009-002-MY3

Abstract: We study the structure of non-stoichiometric HfO x films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry.•HfOx,to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (~10-15%) of HfOy (y<2).•Spatial potential fluctuations of chemical composition lead to fluctuations of the band gap in HfOx .•Transport in HfO x is described by Efros-Shklovskii percolation theory.•We propose that HfOx -based RRAM in low resistance state has the same structure.
Cite: Kruchinin V.N. , Aliev V.S. , Perevalov T.V. , Islamov D.R. , Gritsenko V.A. , Prosvirin I.P. , Cheng C.H. , Chin A.
Nanoscale Potential Fluctuation in Non-Stoichiometric HfOx and Low Resistive Transport in RRAM
Microelectronic Engineering. 2015. V.147. P.165-167. DOI: 10.1016/j.mee.2015.04.091 publication_identifier_short.wos_identifier_type publication_identifier_short.scopus_identifier_type publication_identifier_short.rinz_identifier_type
Dates:
Submitted: Feb 9, 2015
Accepted: Apr 7, 2015
Published online: Apr 22, 2015
Published print: Nov 1, 2015
Identifiers:
publication_identifier.wos_identifier_type WOS:000362308000040
publication_identifier.scopus_identifier_type 2-s2.0-84928953324
publication_identifier.rinz_identifier_type 24028275
publication_identifier.accession_number_identifier_type 2015:710806
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