Formation of Anodic Layers on InAs (111)III. Study of the Chemical Composition Научная публикация
| Журнал |
Semiconductors
ISSN: 1063-7826 , E-ISSN: 1090-6479 |
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| Вых. Данные | Год: 2012, Том: 46, Номер: 4, Страницы: 552-558 Страниц : 7 DOI: 10.1134/S1063782612040239 | ||||||
| Ключевые слова | Arsenic; Fluorine; Etching Time; Acid Electrolyte; Alkaline Electrolyte | ||||||
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Информация о финансировании (1)
| 1 | Сибирское отделение Российской академии наук | 99 |
Реферат:
The chemical composition of ∼20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NH4F is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the concentrations of fluorine and hydroxide ions in the electrolyte and by diffusion processes in the growing layer. Fluorine accumulates at the (anodic layer)/InAs interface. Oxidation of InAs in an acid electrolyte with a low oxygen content and a high NH4F content brings about the formation of anodic layers with a high content of fluorine and elemental arsenic and the formation of an oxygen-free InF x /InAs interface. Fluorinated layers grown in an alkaline electrolyte with a high content of O2− and/or OH− groups contain approximately three times less fluorine and consist of indium and arsenic oxyfluorides. No distinction between the compositions of the layers grown in both types of fluorine-free electrolytes is established.
Библиографическая ссылка:
Valisheva N.A.
, Tereshchenko O.E.
, Prosvirin I.P.
, Kalinkin A.V.
, Goljashov V.A.
, Levtzova T.A.
, Bukhtiyarov V.I.
Formation of Anodic Layers on InAs (111)III. Study of the Chemical Composition
Semiconductors. 2012. V.46. N4. P.552-558. DOI: 10.1134/S1063782612040239 WOS Scopus РИНЦ CAPlusCA OpenAlex
Formation of Anodic Layers on InAs (111)III. Study of the Chemical Composition
Semiconductors. 2012. V.46. N4. P.552-558. DOI: 10.1134/S1063782612040239 WOS Scopus РИНЦ CAPlusCA OpenAlex
Оригинальная:
Валишева Н.А.
, Терещенко О.Е.
, Просвирин И.П.
, Калинкин А.В.
, Голяшов В.А.
, Левцова Т.А.
, Бухтияров В.И.
Формирование анодных слоёв на InAs(111). III. Исследование химического состава.
Физика и техника полупроводников. 2012. Т.46. №4. С.569-575. РИНЦ
Формирование анодных слоёв на InAs(111). III. Исследование химического состава.
Физика и техника полупроводников. 2012. Т.46. №4. С.569-575. РИНЦ
Даты:
| Поступила в редакцию: | 25 авг. 2011 г. |
| Принята к публикации: | 3 окт. 2011 г. |
| Опубликована в печати: | 1 апр. 2012 г. |
| Опубликована online: | 18 апр. 2012 г. |
Идентификаторы БД:
| Web of science: | WOS:000303054200024 |
| Scopus: | 2-s2.0-84859837382 |
| РИНЦ: | 17982973 |
| Chemical Abstracts: | 2012:562893 |
| Chemical Abstracts (print): | 156:652487 |
| OpenAlex: | W2060238215 |