Formation of Anodic Layers on InAs (111)III. Study of the Chemical Composition Full article
| Journal |
Semiconductors
ISSN: 1063-7826 , E-ISSN: 1090-6479 |
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| Output data | Year: 2012, Volume: 46, Number: 4, Pages: 552-558 Pages count : 7 DOI: 10.1134/S1063782612040239 | ||||||
| Tags | Arsenic; Fluorine; Etching Time; Acid Electrolyte; Alkaline Electrolyte | ||||||
| Authors |
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| Affiliations |
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Funding (1)
| 1 | Siberian Branch of the Russian Academy of Sciences | 99 |
Abstract:
The chemical composition of ∼20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NH4F is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the concentrations of fluorine and hydroxide ions in the electrolyte and by diffusion processes in the growing layer. Fluorine accumulates at the (anodic layer)/InAs interface. Oxidation of InAs in an acid electrolyte with a low oxygen content and a high NH4F content brings about the formation of anodic layers with a high content of fluorine and elemental arsenic and the formation of an oxygen-free InF x /InAs interface. Fluorinated layers grown in an alkaline electrolyte with a high content of O2− and/or OH− groups contain approximately three times less fluorine and consist of indium and arsenic oxyfluorides. No distinction between the compositions of the layers grown in both types of fluorine-free electrolytes is established.
Cite:
Valisheva N.A.
, Tereshchenko O.E.
, Prosvirin I.P.
, Kalinkin A.V.
, Goljashov V.A.
, Levtzova T.A.
, Bukhtiyarov V.I.
Formation of Anodic Layers on InAs (111)III. Study of the Chemical Composition
Semiconductors. 2012. V.46. N4. P.552-558. DOI: 10.1134/S1063782612040239 WOS Scopus РИНЦ ANCAN OpenAlex
Formation of Anodic Layers on InAs (111)III. Study of the Chemical Composition
Semiconductors. 2012. V.46. N4. P.552-558. DOI: 10.1134/S1063782612040239 WOS Scopus РИНЦ ANCAN OpenAlex
Original:
Валишева Н.А.
, Терещенко О.Е.
, Просвирин И.П.
, Калинкин А.В.
, Голяшов В.А.
, Левцова Т.А.
, Бухтияров В.И.
Формирование анодных слоёв на InAs(111). III. Исследование химического состава.
Физика и техника полупроводников. 2012. Т.46. №4. С.569-575. РИНЦ
Формирование анодных слоёв на InAs(111). III. Исследование химического состава.
Физика и техника полупроводников. 2012. Т.46. №4. С.569-575. РИНЦ
Dates:
| Submitted: | Aug 25, 2011 |
| Accepted: | Oct 3, 2011 |
| Published print: | Apr 1, 2012 |
| Published online: | Apr 18, 2012 |
Identifiers:
| Web of science: | WOS:000303054200024 |
| Scopus: | 2-s2.0-84859837382 |
| Elibrary: | 17982973 |
| Chemical Abstracts: | 2012:562893 |
| Chemical Abstracts (print): | 156:652487 |
| OpenAlex: | W2060238215 |