1
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Perevalov T.V.
, Shaposhnikov A.V.
, Nasyrov K.A.
, Gritsenko D.V.
, Gritsenko V.A.
, Tapilin V.M.
Electronic Structure of ZrO2 and HfO2
In compilation
Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices.
– Springer.,
2006.
– C.423-434. – ISBN 978-1-4020-4367-3. DOI: 10.1007/1-4020-4367-8_34
WOS
РИНЦ
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2
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Gritsenko V.A.
, Novikov Y.N.
, Shaposhnikov A.V.
, Wong H.
, Zhidomirov G.M.
Capturing Properties of Three-Fold Coordinated Silicon Atom in Silicon Nitride: A Positive Correlation Energy Model
Физика твердого тела. 2003.
V.45. N11. P.1934-1937.
РИНЦ
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3
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Gritsenko V.A.
, Novikov Y.N.
, Shaposhnikov A.V.
, Wong H.
, Zhidomirov G.M.
Capturing Properties of a Threefold Coordinated Silicon Atom in Silicon Nitride: Positive Correlation Energy Model
Physics of the Solid State. 2003.
V.45. N11. P.2031-2035. DOI: 10.1134/1.1626733
WOS
Scopus
РИНЦ
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4
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Gritsenko V.A.
, Shaposhnikov A.V.
, Kwok W.M.
, Wong H.
, Jidomirov G.M.
Valence Band Offset at Silicon/Silicon Nitride and Silicon Nitride/Silicon Oxide Interfaces
Thin Solid Films. 2003.
V.437. N1-2. P.135-139. DOI: 10.1016/S0040-6090(03)00601-1
WOS
Scopus
РИНЦ
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5
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Gritsenko V.A.
, Shaposhnikov A.V.
, Novikov Y.N.
, Baraban A.P.
, Wong H.
, Zhidomirov G.M.
, Roger M.
Onefold Coordinated Oxygen Atom: An Electron Trap in the Silicon Oxide
Microelectronics Reliability. 2003.
V.43. N4. P.665-669. DOI: 10.1016/S0026-2714(03)00030-1
WOS
Scopus
РИНЦ
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6
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Шапошников А.В.
, Гриценко В.А.
, Жидомиров Г.М.
, Roger M.
Захват дырок на двухкоординированный атом кремния в SiO2
Физика твердого тела. 2002.
Т.44. №6. С.985-987.
РИНЦ
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7
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Shaposhnikov A.V.
, Gritsenko V.A.
, Zhidomirov G.M.
, Roger M.
Hole Trapping on the Twofold-Coordinated Silicon Atom in SiO2
Physics of the Solid State. 2002.
V.44. N6. P.1028-1030. DOI: 10.1134/1.1485002
WOS
Scopus
РИНЦ
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8
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Gritsenko V.A.
, Shaposhnikov A.V.
, Zhidomirov G.M.
, Roger M.
Two Fold Coordinated Silicon Atom: A Hole Trap in SiO2
Solid State Communications. 2002.
V.121. N6-7. P.301-304. DOI: 10.1016/S0038-1098(02)00022-4
WOS
Scopus
РИНЦ
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9
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Gritsenko V.A.
, Shaposhnikov A.
, Novikov Y.N.
, Baraban A.P.
, Wong H.
, Zhidomirov G.M.
, Roger M.
Numerical Study of One-Fold Coordinated Oxygen Atom in Silicon Gate Oxide
In compilation
Proceedings - IEEE Hong Kong Electron Devices Meeting, 9th, Hong Kong, China, June 22, 2002.
– Institute of Electrical and Electronics Engineers.,
2002.
– C.39-42. – ISBN 0780374290. DOI: 10.1109/HKEDM.2002.1029152
WOS
Scopus
РИНЦ
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