Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation
Научная публикация
| Общее |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Журнал |
Applied Physics Letters
ISSN: 0003-6951
, E-ISSN: 1077-3118
|
| Вых. Данные |
Год: 2014,
Том: 105,
Страницы: 161601-161605
Страниц
: 5
DOI:
10.1063/1.4899137
|
| Авторы |
Valisheva N.A.
1
,
Aksenov M.S.
1
,
Golyashov V.A.
1
,
Levtsova T.A.
1
,
Kovchavtsev A.P.
1
,
Gutakovskii A.K.
1,2
,
Khandarkhaeva S.E.
2
,
Kalinkin A.V.
3
,
Prosvirin I.P.
2,3
,
Bukhtiyarov V.I.
2,3
,
Tereshchenko O.E.
1,2
|
| Организации |
| 1 |
Rzhanov Institute of Semiconductor Physics, SB RAS, 13, Lavrentiev Ave., Novosibirsk 630090, Russian Federation
|
| 2 |
Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090, Russian Federation
|
| 3 |
Boreskov Institute of Catalysis, SB RAS, 5, Lavrentiev Ave., Novosibirsk 630090, Russian Federation
|
|
Информация о финансировании (2)
|
1
|
Министерство образования и науки Российской Федерации
|
14.621.21.0004 (RFMEFI62114X0004)
|
|
2
|
Российский научный фонд
|
14-22-00143
|
In this letter, we present structural, compositional, and electrical characteristics of anodic oxide layer-based metal-oxide-semiconductor (MOS) capacitors on n-type InAs(111)A, along with the effect of a thin fluorinated interfacial passivation layer. Electrochemical oxidation in acid electrolyte with addition of fluorine (NH4F) led to the formation of oxygen free well-ordered wide gap fluorinated interfacial layer at InAs(111)A with the fixed charge (Qfix) and density of interface states (Dit) in the range of (4–6)_1010cm_2 and (2–12)_1010eV_1cm_2, respectively. We found that MOS capacitors showed excellent capacitance-voltage characteristics with very small frequency dispersion (<1% and <15 mV). Fluorinated interfacial layer consists of crystalline isostructural compound with the InAs substrate, which remains intact with the atomic smoothness and sharpness that explain unpinned behavior of the Fermi level.