InAs-Based Metal-Oxide-Semiconductor Structure Formation in Low-Energy Townsend Discharge
Научная публикация
| Общее |
Язык:
Английский,
Жанр:
Статья (Full article),
Статус опубликования:
Опубликована,
Оригинальность:
Оригинальная
|
| Журнал |
Applied Physics Letters
ISSN: 0003-6951
, E-ISSN: 1077-3118
|
| Вых. Данные |
Год: 2015,
Том: 107,
Номер: 17,
Страницы: 173501-1-173501-5
Страниц
: 5
DOI:
10.1063/1.4934745
|
| Авторы |
Aksenov M.S.
1,2
,
Kokhanovskii A.Yu.
2
,
Polovodov P.A.
2
,
Devyatova S.F.
1
,
Golyashov V.A.
1,2
,
Kozhukhov A.S.
1,2
,
Prosvirin I.P.
2,3
,
Khandarkhaeva S.E.
2
,
Gutakovskii A.K.
1,2
,
Valisheva N.A.
1
,
Tereshсhenko O.E.
1,2
|
| Организации |
| 1 |
Rzhanov Institute of Semiconductor Physics, SB RAS, 13, Lavrentiev Ave., Novosibirsk 630090,
Russian Federation
|
| 2 |
Novosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, Russian Federation
|
| 3 |
Boreskov Institute of Catalysis, SB RAS, 5, Lavrentiev Ave., Novosibirsk 630090, Russian Federation
|
|
Информация о финансировании (1)
|
1
|
Министерство образования и науки Российской Федерации
|
14.621.21.0004 (RFMEFI62114X0004)
|
We developed and applied a method of InAs passivation in the low-energy plasma of Townsend discharge. The controlled interface oxidation in the Ar:O2:CF4 gas mixture under visualization of gas discharge plasma allowed growing thin homogeneous films in the range of 5–15 nm thickness. Oxidation with the addition of CF4 in gas-discharge plasma led to the formation of In and As oxyfluorides with a wide insulating gap and isostructural interface with unpinned Fermi level behavior. The metal-oxide-semiconductor structure showed excellent capacitance-voltage characteristics: small frequency dispersion (<15 mV), density of interface states (Dit ) in the gap below 5 × 1010 eV–1cm−2, and fixed charge (Qfix ) below 5 × 1011 cm−2.