|
41
|
Tereshchenko O.E.
, Golyashov V.A.
, Eremeev S.V.
, Maurin I.
, Bakulin A.V.
, Kulkova S.E.
, Aksenov M.S.
, Preobrazhenskii V.V.
, Putyato M.A.
, Semyagin B.R.
, Dmitriev D.V.
, Toropov A.I.
, Gutakovskii A.K.
, Khandarkhaeva S.E.
, Prosvirin I.P.
, Kalinkin A.V.
, Bukhtiyarov V.I.
, Latyshev A.V.
Ferromagnetic HfO2/Si/GaAs Interface for Spin-Polarimetry Applications
Applied Physics Letters. 2015.
V.107. 123506
:1-5. DOI: 10.1063/1.4931944
WOS
Scopus
РИНЦ
ANCAN
OpenAlex
|
|
42
|
Valisheva N.A.
, Aksenov M.S.
, Golyashov V.A.
, Levtsova T.A.
, Kovchavtsev A.P.
, Gutakovskii A.K.
, Khandarkhaeva S.E.
, Kalinkin A.V.
, Prosvirin I.P.
, Bukhtiyarov V.I.
, Tereshchenko O.E.
Oxide-Free InAs(111)A Interface in Metal-Oxide-Semiconductor Structure with Very Low Density of States Pprepared by Anodic Oxidation
Applied Physics Letters. 2014.
V.105. P.161601-161605. DOI: 10.1063/1.4899137
WOS
Scopus
РИНЦ
ANCAN
OpenAlex
|
|
43
|
Golyashov V.A.
, Kokh K.A.
, Makarenko S.V.
, Romanyuk K.N.
, Prosvirin I.P.
, Kalinkin A.V.
, Tereshchenko O.E.
, Kozhukhov A.S.
, Sheglov D.V.
, Eremeev S.V.
, Borisova S.D.
, Chulkov E.V.
Inertness and Degradation of (0001) Surface of Bi2Se3 Topological Insulator
Journal of Applied Physics. 2012.
V.112. N11. P.113702. DOI: 10.1063/1.4767458
WOS
Scopus
РИНЦ
ANCAN
OpenAlex
|
|
44
|
Valisheva N.A.
, Tereshchenko O.E.
, Prosvirin I.P.
, Kalinkin A.V.
, Goljashov V.A.
, Levtzova T.A.
, Bukhtiyarov V.I.
Formation of Anodic Layers on InAs (111)III. Study of the Chemical Composition
Semiconductors. 2012.
V.46. N4. P.552-558. DOI: 10.1134/S1063782612040239
WOS
Scopus
РИНЦ
ANCAN
OpenAlex
|
|
45
|
Валишева Н.А.
, Терещенко О.Е.
, Просвирин И.П.
, Калинкин А.В.
, Голяшов В.А.
, Левцова Т.А.
, Бухтияров В.И.
Формирование анодных слоёв на InAs(111). III. Исследование химического состава.
Физика и техника полупроводников. 2012.
Т.46. №4. С.569-575.
РИНЦ
|
|
46
|
Atuchin V.V.
, Golyashov V.A.
, Kokh K.A.
, Korolkov I.V.
, Kozhukhov A.S.
, Kruchinin V.N.
, Makarenko S.V.
, Pokrovsky L.D.
, Prosvirin I.P.
, Romanyuk K.N.
, Tereshhenko O.E.
Formation of Inert Bi2Se3(0001) Cleaved Surface
Crystal Growth and Design. 2011.
V.11. N12. P.5507-5514. DOI: 10.1021/cg201163v
WOS
Scopus
РИНЦ
ANCAN
OpenAlex
|
|
47
|
Терещенко О.Е.
, Кох К.А.
, Атучин В.В.
, Романюк К.Н.
, Макаренко С.В.
, Голяшов В.А.
, Кожухов А.С.
, Просвирин И.П.
, Шкляев А.А.
Стабильность поверхности (0001) топологического изолятора Bi2Se3
Письма в Журнал экспериментальной и теоретической физики. 2011.
Т.94. №6. С.500-503.
РИНЦ
|
|
48
|
Tereshchenko O.E.
, Kokh K.A.
, Atuchin V.V.
, Romanyuk K.N.
, Makarenko S.V.
, Golyashov V.A.
, Kozhukhov A.S.
, Prosvirin I.P.
, Shklyaev A.A.
Stability of the (0001) Surface of the Bi2Se3 Topological Insulator
Journal of Experimental and Theoretical Physics Letters (JETP Letters). 2011.
V.94. N6. P.465-468. DOI: 10.1134/S0021364011180159
WOS
Scopus
РИНЦ
ANCAN
OpenAlex
|
|
49
|
Golyashov V.A.
, Aksenov M.S.
, Valisheva N.A.
, Prosvirin I.P.
, Kalinkin A.V.
, Preobrazhensky V.V.
, Putyato M.A.
, Semyagin B.R.
, Tereshhenko O.E.
Formation of HfO2/GaAs(001) Interface with Si Interlayer
In compilation
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings.
2011.
– C.34-36. DOI: 10.1109/EDM.2011.6006887
Scopus
РИНЦ
ANCAN
OpenAlex
|